fds7766s Fairchild Semiconductor, fds7766s Datasheet
fds7766s
Available stocks
Related parts for fds7766s
fds7766s Summary of contents
Page 1
... FDS7766S 30V N-Channel PowerTrench MOSFET General Description The FDS7766S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS7766S includes DS(ON) an integrated Schottky diode using monolithic SyncFET technology. ...
Page 2
... Typ Max Units mV/°C 500 A ±100 –2 mV/°C 4.0 5.5 m 4.6 6.5 5.7 7 4785 pF 825 pF 290 pF 1 132 3.5 A 0.4 0 125°C/W when mounted on a minimum pad. FDS7766S Rev C (W) ...
Page 3
... Source Current and Temperature. 3.0V 3.5V 4.5V 6.0V 10V DRAIN CURRENT ( 8. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.1 0.2 0.3 0.4 0.5 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS7766S Rev C ( 0.7 ...
Page 4
... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 °C Duty Cycle 100 1000 FDS7766S Rev C (W) 30 1000 ...
Page 5
... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7766S. 12.5 nS/div Figure 12. FDS7766S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7766) ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...