fdd6690 Fairchild Semiconductor, fdd6690 Datasheet

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fdd6690

Manufacturer Part Number
fdd6690
Description
N-channel, Logic Level, Powertrenchtm Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD6690
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
fdd6690A
0
FDD6690A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
2003 Fairchild Semiconductor Corp.
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DC/DC converter
Motor Drives
DSS
GSS
D
J
, T
JC
JA
JA
Device Marking
STG
FDD6690A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
(TO-252)
D-PAK
TO-252
FDD6690A
Device
Parameter
@T
Pulsed
@T
@T
@T
D
C
A
C
A
A
=25°C
=25°C
=25°C
=25°C
=25°C
T
A
=25
D-PAK (TO-252)
o
C unless otherwise noted
Package
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
(Note 3)
(Note 1)
Features
46 A, 30 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
Reel Size
13’’
R
R
–55 to +175
DS(ON)
DS(ON)
Ratings
G
100
3.3
1.5
2.7
30
46
12
56
45
96
20
= 12 m
= 14 m
Tape width
12mm
D
S
@ V
@ V
GS
GS
July 2003
= 10 V
= 4.5 V
2500 units
FDD6690A Rev EW)
Quantity
Units
C/W
W
V
V
A
C

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fdd6690 Summary of contents

Page 1

... A (Note 1) (Note 1a) (Note 1b) Package Reel Size D-PAK (TO-252) 13’’ July 2003 DS(ON 4.5 V DS(ON Ratings Units 100 W 56 3.3 1.5 –55 to +175 C 2.7 C Tape width Quantity 12mm 2500 units FDD6690A Rev EW) ...

Page 2

... GS GEN V = 15V Min Typ Max Units 180 mV 100 –5 mV 9 1230 pF 325 pF 150 pF 1 3.5 nC 5.1 nC FDD6690A Rev. EW) ...

Page 3

... JA 2 1in pad copper Scale letter size paper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 2.3 A 0.76 1.2 V (Note 96°C/W when mounted minimum pad. FDD6690A Rev. EW) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature = 3.5V 4.0V 4.5V 5.0V 6.0V 10. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6690A Rev. EW 1.4 ...

Page 5

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° TIME (sec) 1 Power Dissipation R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6690A Rev. EW) 30 100 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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