bso150n03mdg Infineon Technologies Corporation, bso150n03mdg Datasheet
bso150n03mdg
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bso150n03mdg Summary of contents
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OptiMOS ® 3 M-Series Power-MOSFET Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOM for High Frequency SMPS SW • 100% Avalanche tested • Very low on-resistance R DS(on) • Excellent gate charge ...
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Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f ≤10 s tot A p 2.5 2 1 Safe operating area =25 ° parameter: t ...
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Typ. output characteristics I =f =25 ° parameter 4 Typ. transfer characteristics I =f ...
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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
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Avalanche characteristics parameter: T j(start) 10 125 ° Drain-source breakdown voltage V =f BR(DSS ...
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Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.0 page 8 BSO150N03MD G 2008-07-08 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...