blf2047l-90 NXP Semiconductors, blf2047l-90 Datasheet - Page 3

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blf2047l-90

Manufacturer Part Number
blf2047l-90
Description
Blf2047l/90 Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum junction temperature.
CHARACTERISTICS
T
Note
1. The value of capacitance is that of the die only.
2000 Mar 06
R
V
V
I
I
I
g
R
C
j
DSS
DSX
GSS
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
rss
UHF power LDMOS transistor
thermal resistance from junction to heatsink T
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
note 1
GS
DS
GS
GS
GS
DS
GS
GS
= 0; I
= 10 V; I
= 0; V
=V
= 15 V; V
= 10 V; I
= V
= 0; V
3
GSth
GSth
CONDITIONS
D
h
DS
DS
= 25 C; P
= 2.1 mA
+ 9 V; V
+ 9 V; I
D
D
= 26 V
= 26 V; f = 1 MHz;
= 210 mA
= 7.5 A
DS
CONDITIONS
= 0
D
DS
= 7.5 A
tot
= 10 V
= 92 W; note 1
65
1.5
27
MIN.
6.0
0.11
5.1
TYP.
BLF2047L/90
VALUE
0.81
Product specification
3.5
15
38
MAX.
UNIT
K/W
V
V
A
nA
S
pF
UNIT
A

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