blf2047l-90 NXP Semiconductors, blf2047l-90 Datasheet - Page 5

• Manufacturer Part Number: blf2047l-90
• Description: Blf2047l/90 Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2000 Mar 06
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.4
V
Fig.6
1
DS
DS
(dBc)
= 2000 MHz; f
d im
( )
Z L
= 26 V; I
= 26 V; I
20
40
60
0
4
2
0
2
4
1.8
0
d 3
d 5
d 7
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
Load impedance as a function of frequency
(series components); typical values.
DQ
D
= 525 mA; P
= 525 mA; T
2
= 2000.1 MHz.
40
R L
X L
L
h
= 90 W; T
25 C;
2
h
80
25 C.
P L (PEP) (W)
f (GHz)
MCD929
MGT004
120
2.2
5
handbook, halfpage
handbook, halfpage
V
(1) I
(2) I
(3) I
Fig.5
Fig.7
V
DS
DS
(dBc)
( )
d 3
Z i
= 26 V; T
20
40
60
= 26 V; I
DQ
DQ
DQ
0
6
4
2
0
2
1.8
0
= 400 mA.
= 525 mA.
= 650 mA.
Third-order intermodulation distortion as a
function of peak envelope load power;
typical values.
Input impedance as a function of frequency
(series components); typical values.
D
h
= 525 mA; P
25 C; f
x i
r i
40
1
= 2000 MHz; f
L
(1)
(2)
(3)
= 90 W; T
2
h
2
80
BLF2047L/90
= 2000.1 MHz.
25 C.
Product specification
P L (PEP) (W)
f (GHz)
MCD930
MGT003
120
2.2