tga2521 TriQuint Semiconductor, tga2521 Datasheet
tga2521
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tga2521 Summary of contents
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... Point-to-Point Radio • Point-to-Multipoint Communications Product Description The TriQuint TGA2521- three stage HPA MMIC design using TriQuint’s proven 0.25 um Power pHEMT process. The TGA2521-SM is designed to support a variety of millimeter wave applications including point-to-point digital radio and other K band linear gain applications. ...
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... Drain Current under RF Drive Vg1 Gate #1 Voltage Vg2 Gate #2 Voltage 1/ See assembly diagram for bias instructions. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table I Table II Parameter 1/ Feb 2010 © Rev C TGA2521-SM Value Notes 115 mA 2/ 407 ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Table III TEST MIN CONDITIONS f = 17.7 – 23.6 GHz 18 17.7 – 23.6 GHz f = 17.7 – 23.6 GHz f = 17.7 – 23.6 GHz 17.7 – 23.6 GHz 17.7 – 23.6 GHz 17.7 – 23.6 GHz Feb 2010 © Rev C TGA2521-SM NOM MAX UNITS 25.5 dBm 23.5 dBm 33 dBm 5 ...
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... Test Conditions Tbaseplate = 85 ° 320 1 TBD mA Pout = TBD dBm Pd = TBD W 30 Seconds Feb 2010 © Rev C TGA2521-SM Value Notes Tchannel = 200 °C θjc = 29.5 °C/W Tchannel = 127 ° 7.7E+6 Hrs θjc = TBD °C/W Tchannel = TBD ° TBD Hrs 320 ° ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 5 ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 6 ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 7 ...
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... Bias conditions Idq = 320 mA -0.5 V (Vg held constant from small Bias conditions 320 mA -0.5 V (Id held constant from small TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Measured Data signal to Psat) signal to Psat) Feb 2010 © Rev C TGA2521-SM 8 ...
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... Bias conditions 320 mA -0.5 V Typical (Id held constant from TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Measured Data Measured Data small signal to Psat) Feb 2010 © Rev C TGA2521-SM 9 ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 10 ...
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... Measured Data Measured Data Bias conditions 320 mA -0.5 V Typical Bias conditions 320 mA -0.5 V Typical TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 11 ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Package Pinout BOTTOM VIEW SIDE VIEW Description Out 16 Vg1 14 Vg2 15 Vd1 (top) 6 Vd1 (bot) 13 Vd2 (top) 7 Vd2 (bot) GND 5,8 No Connect Feb 2010 © Rev C TGA2521-SM PIN #1 IDENTIFICATION ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Electrical Schematic Vd1 Vg2 (Pin 15) (Pin 14) (Pin 13) Vd1 Vd2 (Pin 6) (Pin 7) Bias Procedures Bias-down Procedure Turn off RF supply Reduce Vg1, Vg2 to -1.5V. Ensure Turn Vd1, Vd2 Turn Vg1, Vg2 Feb 2010 © Rev C TGA2521-SM Vd2 RF OUT (Pin 11) 13 ...
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... Package edge to bond pad dimensions are shown to center of pad GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Mechanical Drawing Feb 2010 © Rev C TGA2521-SM 14 ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Value -- 1.0 μF 0.01 μF 1092-01A-5 Southwest Microwave End Launch Connector Feb 2010 © Rev C TGA2521-SM Vg2 C4 C10 Vd2 C11 OUT 11 J2 Ω Vd2 C12 C6 Description TriQuint TGA2521-SM 1206 SMT Ceramic Capacitor 0603 SMT Ceramic Capacitor 15 ...
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... Vd2 (top) Vd2 (bot) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Board Material: 10 mil thick Rogers 4350 Feb 2010 © Rev C TGA2521- C11 C10 J2 RF OUT Ω ...
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... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com Recommended Land Pattern Vd1 Vg2 Vg1 Vd2 Vd1 Vd2 NC NC Board Material: 10 mil thick Rogers 4350 Feb 2010 © Rev C TGA2521-SM RF OUT 17 ...
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... Max Peak Temperature Time within 5 °C of Peak Temperature Ramp-down Rate Part TGA2521-SM, TAPE AND REEL GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com ...
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... TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com TGA2521-SM Feb 2010 © Rev C 19 ...