as4c256k16e0 ETC-unknow, as4c256k16e0 Datasheet

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as4c256k16e0

Manufacturer Part Number
as4c256k16e0
Description
256k 6 Cmos Dram
Manufacturer
ETC-unknow
Datasheet

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Features
• Organization: 262,144 words × 16 bits
• High speed
• Low power consumption
• EDO page mode
Pin arrangement
Selection guide
Shaded areas contain advance information.
Maximum
Maximum column address access time
Maximum
Maximum output enable (
Minimum read or write cycle time
Minimum EDO page mode cycle time
Maximum operating current
Maximum CMOS standby current
- 30/35/50 ns RAS access time
- 16/18/25 ns column address access time
- 7/10/10/10 ns CAS access time
- Active:
- Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25)
4/11/01; v.1.1
RAS
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
Vcc
Vcc
Vcc
WE
NC
NC
NC
A0
A1
A2
A3
RAS
CAS
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
500 mW max (AS4C256K16E0-25)
access time
access time
SOJ
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
OE
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
) access time
RAS
V
I/O0
I/O1
I/O2
I/O3
V
I/O4
I/O5
I/O6
I/O7
V
WE
NC
NC
NC
A0
A1
A2
A3
CC
CC
CC
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
5V 256K×16 CMOS DRAM (EDO)
Symbol
TSOP II
t
t
t
t
I
I
Alliance Semiconductor
RAC
CAA
CAC
OEA
t
t
CC1
CC2
RC
PC
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
AS4C256K16E0-30
GND
I/O15
I/O14
I/O13
I/O12
GND
I/O11
I/O10
I/O9
I/O8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
GND
180
2.0
30
16
10
10
65
12
• Refresh
• Read-modify-write
• TTL-compatible, three-state I/O
• JEDEC standard packages
• 5V power supply
• Latch-up current > 200 mA
Pin designation
Pin(s)
A0 to A8
RAS
I/O0 to I/O15
OE
UCAS
LCAS
WE
V
GND
- 512 refresh cycles, 8 ms refresh interval
- RAS-only or CAS-before-RAS refresh or self-refresh
- Self-refresh option is available for new generation device
- 400 mil, 40-pin SOJ
- 400 mil, 40/44-pin TSOP II
CC
only. Contact Alliance for more information.
®
AS4C256K16E0-35
Description
Address inputs
Row address strobe
Input/output
Output enable
Column address strobe, upper byte
Column address strobe, lower byte
Read/write control
Power (5V
Ground
160
2.0
35
18
10
10
70
14
Copyright © Alliance Semiconductor. All rights reserved.
0.5V)
AS4C256K16E0-50
AS4C256K16E0
140
2.0
50
25
10
10
85
25
1 of 24
Unit
mA
mA
ns
ns
ns
ns
ns
ns

Related parts for as4c256k16e0

as4c256k16e0 Summary of contents

Page 1

... Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 500 mW max (AS4C256K16E0-25) - Standby: 3.6 mW max, CMOS I/O (AS4C256K16E0-25) • EDO page mode Pin arrangement SOJ V CC Vcc 1 40 ...

Page 2

... The AS4C256K16E0 is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The AS4C256K16E0 features a high speed page mode operation in which high speed read, write and read-write are performed on any of the 512 16 bits defined by the column address ...

Page 3

... IH , – 200 – 190 = min SC - 0.2V – 1.0 CC – 200 2.4 – – 0 -0.2V, CC – 2.0 -0.2V, CC Alliance Semiconductor AS4C256K16E0 Max Unit +7.0 V +7.0 V +7.0 V +70 °C +150 °C o 260 10 C sec – mA -35 -50 Min Max Min Max Unit Note -10 10 -10 10 ...

Page 4

... CAS 0 – 0 RAS 16 – – Alliance Semiconductor AS4C256K16E0 -50 Max Min Max Unit Notes – 85 – ns – 25 – ns 75K 50 75K ns – 10 – – ...

Page 5

... Min Max Min 100 – 105 50 – – – – – 15 Alliance Semiconductor AS4C256K16E0 -50 Max Min Max Unit Notes – 0 – ns – 9 – ns – 30 – ns – 0 – – 9 – – 30 – ...

Page 6

... OE 8 – 8 – -30 -35 Min Max Min Max 100K – 100K – 85 – 85 – 30 – 30 – Alliance Semiconductor AS4C256K16E0 -50 Min Max Unit Notes 25 – – – – – 75K ns -50 Min Max ...

Page 7

... ASC t t CAS RCS RAD RAL Col Address t ROH t RAC OEA t CAC t CLZ Alliance Semiconductor AS4C256K16E0 (min) GND and V (max and greater than the RCD is greater than the RAD WS Falling input RRH t RCH t OEZ t ...

Page 8

... CLZ RAS t t RCD RSH t CSH t CAS t ASC t t RAL RAD t CAH Column t RCS t ROH t OEA t RAC CAC t CLZ Alliance Semiconductor AS4C256K16E0 CRP t RCH t RRH t OEZ t OFF Data Out CRP t RCH t RRH t OEZ t OFF Data Out ...

Page 9

... WP t WCS t DHR Data RAS t AWR t RAD t RAL Column Address t t CAH ASC t t RSH RCD t CSH t CAS t CWL t WCS t RWL t WCR DHR Data In Alliance Semiconductor AS4C256K16E0 WCH CRP t RPC t WCH ...

Page 10

... WP t DHR Data RAS t CSH t RSH t t RCD CAS t RAL t AWR t t RAD ASC t CAH Col Address t WCR t CWL t OEH t DHR t t OED Data In Alliance Semiconductor AS4C256K16E0 RPC t CAS t CRP (OE controlled RWL ...

Page 11

... DS DH Data In t OED RAS t RAD t AWR t RAL Column Address t CAH t t RCD CAS t CSH t t ACS RSH t CWL t RWL OEH Data In Alliance Semiconductor AS4C256K16E0 (OE controlled CRP t RPC t RWL OEH (OE controlled CRP t RPC ...

Page 12

... RWC t RAS t RCD t CSH RAL t t RAD ASC t CAH Col Address t RWD t AWD t t RCS CWD t OEA t OEZ t RAC CAC t CLZ Data Out Alliance Semiconductor AS4C256K16E0 CAS t RSH t RWL t CWL OED Data ...

Page 13

... RAS t CSH t t RCD CAS t RSH t ACS t RAL t CAH Column Address t RWD t AWD t t CWD RCS t OEA t OED t Data In CLZ t CAC OEZ RAC Data Out t OED Data Out Alliance Semiconductor AS4C256K16E0 CRP t RPC t CWL t RWL ...

Page 14

... Lower Output 4/11/01; v.1.1 ® t RWC t RAS t CSH t t CAS RCD t RSH t RAL t CAH Column Address t RWD t AWD t CWD t OEA Data Out t OED t RAC CAC t t CLZ OEZ Data Out Alliance Semiconductor AS4C256K16E0 RPC t CRP t CWL t RWL Data ...

Page 15

... RCH t t OEA OEA t CAC t CLZ CAP Data Out CAP t t CAC OFF t OEZ Data Out 1 Alliance Semiconductor AS4C256K16E0 RSH CAH t RAL Col Address t RRH t RCH t OEA t CAP Data Out RSH CRP t CAS ...

Page 16

... CAH CAH t ASC Column WCH WCH t WCS CWL CWL Data Data In 1 Alliance Semiconductor AS4C256K16E0 t RWL CAH ASC RSH WCS t RAL Col Address t CWL WCH OEH Data In t ...

Page 17

... DS t CLZ t CAC Data In Data In Data Out Data Out RAS t CHR t CSR t t RAS t CRP t t ARS RAH Row Address Alliance Semiconductor AS4C256K16E0 CRP t RAL t CAH Col Address t RWL t t CWD CWL t t AWD WP t OEA t CAP t CLZ t CAC ...

Page 18

... AWD t t CWD CWD t CWL OEA OEA CAP t OEZ t CLZ t OED CAC t CLZ Alliance Semiconductor AS4C256K16E0 RSH t t CAS CRP RAL t CAH t AWD t ASC RWL t CWD t t CWL CWL OEA ...

Page 19

... RSH ASC Col Address t RRH t OEA t CAC t CLZ Data Out RAS RP t RSH RAL t CAH Col Address t RWL t WCR WCH DHR Data In Alliance Semiconductor AS4C256K16E0 RAS PR t CHR t CRP t OFF t OEZ ...

Page 20

... CAC t CLZ Data Out t RCS t OEA t ROH t RWL t CWL WCH t WCS Data In t RCS t CWD t AWD t OEA CLZ t OEZ t CAC Data Out Alliance Semiconductor AS4C256K16E0 OFF t RRH t RCH CWL t OED Data ...

Page 21

... Ambient temperature (°C) Typical supply current I CC vs. ambient temperature 0.0 –55 – Ambient temperature (°C) Alliance Semiconductor AS4C256K16E0 t RPS t RPC t CHS Typical access time t RAC vs. load capacitance C a 100 100 150 ...

Page 22

... Output voltage (V) Typical EDO page mode current I CC4 vs. supply voltage 0.0 4.0 4.5 5.0 5.5 6.0 Supply voltage (V) Alliance Semiconductor AS4C256K16E0 Typical TTL stand-by current I CC2 vs. supply voltage V CC 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 4.0 4.5 5.0 5.5 6.0 Supply voltage (V) Typical output source current I OH vs. output voltage ...

Page 23

... D 1.020 1.035 E 0.370 (typical) E1 0.390 0.410 E2 0.435 0.445 e 0.050 (typical) = room temperature ± 0. Test conditions Max out 50 ns AS4C256K16E0-50JC AS4C256K16E0-50TC C Commercial temperature range, 0° ° Unit ...

Page 24

... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. ® Alliance Semiconductor AS4C256K16E0 ...

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