mt58l512v18p ETC-unknow, mt58l512v18p Datasheet
mt58l512v18p
Manufacturer Part Number
mt58l512v18p
Description
512k 256k 32/36 Pipelined, Syncburst Sram
Manufacturer
ETC-unknow
Datasheet
1.MT58L512V18P.pdf
(27 pages)
8Mb SYNCBURST
SRAM
FEATURES
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (V
• Separate +3.3V or +2.5V isolated output buffer
• SNOOZE MODE for reduced-power standby
• Single-cycle deselect (Pentium
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL
• Three chip enables for simple depth expansion
• Clock-controlled and registered addresses, data
• Internally self-timed WRITE cycle
• Burst control (interleaved or linear burst)
• Automatic power-down for portable applications
• 100-pin TQFP package
• 165-pin FBGA package
• Low capacitive bus loading
• x18, x32, and x36 versions available
OPTIONS
• Timing (Access/Cycle/MHz)
• Configurations
• Packages
• Operating Temperature Range
8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L512L18P_C.p65 – Rev. 2/02
supply (V
WRITE
and address pipelining
I/Os and control signals
3.5ns/6ns/166 MHz
4.0ns/7.5ns/133 MHz
5ns/10ns/100 MHz
3.3V I/O
2.5V I/O
100-pin TQFP (2-chip enable)
100-pin TQFP (3-chip enable)
165-pin, 13mm x 15mm FBGA
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)**
512K x 18
256K x 32
256K x 36
512K x 18
256K x 32
256K x 36
DD
Q)
MT58L512L18PT-6
Part Number Example:
®
BSRAM-compatible)
MT58L512V18P
MT58L256V32P
MT58L256V36P
MT58L512L18P
MT58L256L32P
MT58L256L36P
MARKING
None
-7.5
-10
™
IT
-6
T
S
F*
DD
)
1
PIPELINED, SCD SYNCBURST SRAM
MT58L512L18P, MT58L256L32P, MT58L256L36P;
MT58L512V18P, MT58L256V32P, MT58L256V36P
3.3V V
Deselect
* A Part Marking Guide for the FBGA devices can be found on Micron’s
** Industrial temperature range offered in specific speed grades and
GENERAL DESCRIPTION
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
18, 256K x 32, or 256K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single-clock in-
put (CLK). The synchronous inputs include all ad-
dresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
(CE2, CE2#), burst control inputs (ADSC#, ADSP#,
ADV#), byte write enables (BWx#) and global write
Web
NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).
configurations. Contact factory for more information.
The Micron
Micron’s 8Mb SyncBurst SRAMs integrate a 512K x
8Mb: 512K x 18, 256K x 32/36
site—http://www.micron.com/support/index.html.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
, 3.3V or 2.5V I/O, Pipelined, Single-Cycle
®
100-Pin TQFP
165-Pin FBGA
SyncBurst
™
SRAM family employs
1
©2002, Micron Technology, Inc.
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