pa28f004sc-120 Intel Corporation, pa28f004sc-120 Datasheet

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pa28f004sc-120

Manufacturer Part Number
pa28f004sc-120
Description
8-mbit 1-mbit X 8 Flashfiletm Memory
Manufacturer
Intel Corporation
Datasheet
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Intel’s 28F008SA 8-Mbit FlashFile
id-state storage The 28F008SA’s extended cycling symmetrically blocked architecture fast access time
write automation and low power consumption provide a more reliable lower power lighter weight and higher
performance alternative to traditional rotating disk technology The 28F008SA brings new capabilities to porta-
ble computing Application and operating system software stored in resident flash memory arrays provide
instant-on rapid execute-in-place and protection from obsolescence through in-system software updates
Resident software also extends system battery life and increases reliability by reducing disk drive accesses
For high density data acquisition applications the 28F008SA offers a more cost-effective and reliable alterna-
tive to SRAM and battery Traditional high density embedded applications such as telecommunications can
take advantage of the 28F008SA’s nonvolatility blocking and minimal system code requirements for flexible
firmware and modular software designs
The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages Pin assign-
ments simplify board layout when integrating multiple devices in a flash memory array or subsystem This
device uses an integrated Command User Interface and state machine for simplified block erasure and byte
write The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks
Intel’s 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity Its 85 ns access time provides superior performance when compared with magnetic storage media
A deep powerdown mode lowers power consumption to 1 mW typical thru V
handheld instrumentation and other low-power applications The RP
absolute data protection during system powerup down
Manufactured on Intel’s 0 8 micron ETOX process the 28F008SA provides the highest levels of quality
reliability and cost-effectiveness
High-Density Symmetrically-Blocked
Architecture
Extended Cycling Capability
Automated Byte Write and Block Erase
System Performance Enhancements
Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or
copyright for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products Intel retains the right to make
changes to these specifications at any time without notice Microcomputer Products may have minor variations to this specification known as errata
COPYRIGHT
Other brands and names are the property of their respective owners
Sixteen 64-Kbyte Blocks
100 000 Block Erase Cycles
1 6 Million Block Erase
Cycles per Chip
Command User Interface
Status Register
RY BY
Erase Suspend Capability
INTEL CORPORATION 1995
8-MBIT (1-MBIT x 8) FlashFile
Status Output
Extended Temperature Specifications Included
TM
Memory is the highest density nonvolatile read write solution for sol-
28F008SA
November 1995
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Deep Power-Down Mode
Very High-Performance Read
SRAM-Compatible Write Interface
Hardware Data Protection Feature
Industry Standard Packaging
ETOX III Nonvolatile Flash Technology
0 20 mA I
85 ns Maximum Access Time
Erase Write Lockout during Power
Transitions
40-Lead TSOP 44-Lead PSOP
12V Byte Write Block Erase
TM
power control input also provides
CC
MEMORY
CC
Typical
crucial in portable computing
Order Number 290429-005

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