hat2166h05 Renesas Electronics Corporation., hat2166h05 Datasheet
hat2166h05
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hat2166h05 Summary of contents
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HAT2166H Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.9 m typ. ( DS(on) GS Outline ...
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HAT2166H Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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HAT2166H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics Pulse Test 4 Drain to Source Voltage Drain to Source ...
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HAT2166H Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse ...
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HAT2166H Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 ...
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HAT2166H Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.6.00 Sep 20, 2005 page Vout Monitor R Vin L Vout d(on) Switching Time Waveform 90% 10% 10% 10% ...
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HAT2166H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2166H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...