upa1700 Renesas Electronics Corporation., upa1700 Datasheet

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upa1700

Manufacturer Part Number
upa1700
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. G10479EJ2V0DS00 (2nd edition)
Date Published September 1995 P
Printed in Japan
DESCRIPTION
sistor designed for DC/DC converter and power man-
agement applications of note book computers.
FEATURES
• Low On-Resistance
• Low C
• Built-in G-S Protection Diode
• Small and Surface Mount Package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation
Channel Temperature
Storage Temperature
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
(T
PART NUMBER
This product is N-Channel MOS Field Effect Tran-
(Power SOP8)
A
* PW
** Mounted on ceramic substate of 1200 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
= 25 C)**
PA1700G
R
R
DS(on)1
DS(on)2
iss
10 s, Duty Cycle
= 27 m
= 50 m
C
iss
= 850 pF Typ.
Power SOP8
PACKAGE
Typ. (V
Typ. (V
I
V
V
I
P
T
T
D(DC)
D(pulse)
CH
stg
DSS
GDS
T
GS
GS
N-CHANNEL POWER MOS FET
1 %
MOS FIELD EFFECT POWER TRANSISTOR
= 10 V, I
= 4 V, I
–55 to +150
150
2.0
30
7.0
20
28
D
D
DATA SHEET
= 3.5 A)
INDUSTRIAL USE
= 3.5 A)
A
= 25 C)
SWITCHING
2
W
V
V
A
A
C
C
0.7 mm
1
8
5.37 Max
Gate
Gate Protection
Diode
0.40
1.27
PACKAGE DIMENSIONS
To keep good radiate condition,
It is recommended that all pins
are soldering to print board.
EQUIVALENT CIRCUIT
+0.10
–0.05
4
5
0.78 Max
(in millimeter)
0.12 M
Source
Drain
1,2,3
4
5,6,7,8 ; Drain
0.5±0.2
PA1700
6.0±0.3
4.4
; Source
; Gate
Body
Diode
©
0.8
0.10
1995

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upa1700 Summary of contents

Page 1

DESCRIPTION This product is N-Channel MOS Field Effect Tran- sistor designed for DC/DC converter and power man- agement applications of note book computers. FEATURES • Low On-Resistance Typ. (V DS(on Typ. (V ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Drain to Source On-state R DS(on)1 Resistance R DS(on)2 Gate to Source Cutoff Voltage V GS(off) Forward Transfer Admittance | Drain Leakage Current I DSS Gate to Source Leakage I GSS Current ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T – Ambient Temperature – °C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V Pulsed T = –25 ° °C 75 °C 10 125 °C 1 0.1 0.1 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE –50 0 100 150 50 T – Channel Temperature – °C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...

Page 6

REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application ...

Page 7

PA1700 7 ...

Page 8

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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