upa1705g Renesas Electronics Corporation., upa1705g Datasheet

upa1705g

Manufacturer Part Number

upa1705g

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1705G.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

designed for DC/DC Converters and power management

application of notebook computers.

FEATURES

ORDERING INFORMATION

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (Pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

This product is N-Channel MOS Field Effect Transistor

Super low on-state resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

G12712EJ1V0DS00 (1st edition)

February 1999 NS CP(K)

PA1705G

= 19.0 m

= 30.0 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

Exceeding the rated voltage may be applied to this device.

: C

iss

= 750 pF TYP.

10 s, Duty cycle

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

TYP. (V

Note1

= 25 °C )

= 0)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOS FET

1 %

Power SOP8

Note2

PACKAGE

= 4.0 A)

= 25 °C, A ll terminals are connected.)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

–55 to + 150

x 1.7 mm

MOS FIELD EFFECT TRANSISTOR

±25

±50

150

2.0

±8

PACKAGE DRAWING (Unit : mm)

°C

5.37 Max.

0.40

1.27

+0.10

–0.05

0.78 Max.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

1, 2, 3

5, 6, 7, 8

0.5 ±0.2

Source

Drain

6.0 ±0.3

PA1705

4.4

; Source

; Gate

; Drain

Body

Diode

0.8

0.10

1998, 1999

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upa1705g Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers. FEATURES Super low on-state resistance R = 19.0 m TYP DS(on)1 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

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upa1705g Renesas Electronics Corporation., upa1705g Datasheet

upa1705g

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