upa1709g Renesas Electronics Corporation., upa1709g Datasheet

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upa1709g

Manufacturer Part Number
upa1709g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1709G.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
DESCRIPTION
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
switch.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
Low on-resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
G13436EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
2. Mounted on ceramic substrate of 1200 mm
iss
PA1709G
= 9.3 m
= 13.8 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 1850 pF (TYP.)
10 s, Duty Cycle
(TYP.) (V
(TYP.) (V
Note1
DS
A
GS
= 25°C)
= 0 V)
GS
= 0 V)
GS
= 10 V, I
= 4.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
1 %
The mark ! ! ! ! shows major revised points.
D
A
= 4.5 A)
D
= 25°C, All terminals are connected.)
= 4.5 A)
INDUSTRIAL USE
DATA SHEET
I
D(pulse)
I
V
V
D(DC)
T
T
P
DSS
GSS
stg
ch
SWITCHING
T
2
x 0.7 mm
–55 to + 150
MOS FIELD EFFECT TRANSISTOR
PACKAGE DRAWING (Unit : mm)
±9.0
±25
±36
150
2.0
40
8
1
5.37 Max.
1.27
0.40
+0.10
–0.05
°C
°C
W
V
V
A
A
5
4
0.78 Max.
0.12 M
EQUIVARENT CIRCUIT
1,2,3
4
5,6,7,8
Gate
Gate
Protection
Diode
0.5 ±0.2
6.0 ±0.3
; Source
; Gate
; Drain
4.4
PA1709
Source
Drain
©
0.8
0.10
Body
Diode
1998

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upa1709g Summary of contents

Page 1

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES Low on-resistance R = 9.3 m (TYP.) (V DS(on 13.8 m (TYP.) (V DS(on)2 Low ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = -50 ˚C A -25 ˚C 25 ˚ ˚C 125 ˚C 1 150 ˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 150 - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...

Page 6

Data Sheet G13436EJ2V0DS PA1709 ...

Page 7

Data Sheet G13436EJ2V0DS PA1709 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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