upa1707g Renesas Electronics Corporation., upa1707g Datasheet

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upa1707g

Manufacturer Part Number
upa1707g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1707G.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
Transistor designed for DC/DC converters and power
management applications of notebook computers.
FEATURES
• Low on-resistance
• Low C
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
The µ PA1707 is N-Channel MOS Field Effect
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
µ PA1707G
iss
G13084EJ3V0DS00 (3rd edition)
April 2001 NS CP(K)
= 10.0 mΩ TYP. (V
= 12.5 mΩ TYP. (V
= 14.0 mΩ TYP. (V
: C
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
iss
= 1400 pF TYP.
C
Note1
= 25°C)
DS
A
GS
= 25°C)
= 0 V)
= 0 V)
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 4.0 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
The mark # shows major revised points.
A
D
D
D
= 25°C, All terminals are connected.)
= 5.0 A)
= 5.0 A)
= 5.0 A)
INDUSTRIAL USE
I
I
D(pulse)
V
V
D(DC)
T
T
P
DSS
GSS
DATA SHEET
stg
ch
T
SWITCHING
2
–55 to +150
x 1.7 mm
MOS FIELD EFFECT TRANSISTOR
150
±20
±10
±40
2.0
30
8
1
°C
°C
W
V
V
A
A
5.37 MAX.
PACKAGE DRAWING (Unit: mm)
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
µ µ µ µ PA1707
1,2,3
4
5,6,7,8
0.5 ±0.2
6.0 ±0.3
4.4
; Source
; Gate
; Drain
Source
©
Drain
Body
Diode
0.8
0.10
1998

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upa1707g Summary of contents

Page 1

DESCRIPTION The µ PA1707 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Low on-resistance R = 10.0 mΩ TYP. (V DS(on 12.5 mΩ TYP. (V DS(on)2 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse D(DC) ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 10 1 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 10 = −25˚ 25˚C 75˚C 125˚ ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 − 120 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 100 10 ...

Page 6

Data Sheet G13084EJ3V0DS µ µ µ µ PA1707 ...

Page 7

Data Sheet G13084EJ3V0DS µ µ µ µ PA1707 7 ...

Page 8

The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

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