upa1723g Renesas Electronics Corporation., upa1723g Datasheet

upa1723g

Manufacturer Part Number

upa1723g

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1723G.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

DESCRIPTION

designed for power management switch.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The PA1723 is N-Channel MOS Field Effect Transistor

Low on-state resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

G14026EJ2V0DS00 (2nd edition)

April 2001 NS CP(K)

PA1723G

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

= 6.7 m

= 7.4 m

= 8.7 m

: C

iss

= 3800 pF TYP.

10 s, Duty Cycle

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

MAX. (V

Note1

= 25°C)

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

N-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

Note2

1 %

= 7.0 A)

The mark

= 25°C, All terminals are connected.)

INDUSTRIAL USE

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

SWITCHING

shows major revised points.

–55 to + 150

x 2.2mm

MOS FIELD EFFECT TRANSISTOR

±12

±13

±52

150

2.0

°C

PACKAGE DRAWING (Unit : mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

1,2,3

5,6,7,8

0.5 ±0.2

PA1723

Source

6.0 ±0.3

Drain

4.4

; Source

; Gate

; Drain

Body

Diode

1998, 1999

0.8

0.10

Related parts for upa1723g

upa1723g Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES Low on-state resistance R = 6.7 m MAX 4 DS(on 7.4 m MAX. (V ...

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A FORWARD TRANSFER CHARACTERISTICS 100 125˚C A 75˚C 1 25˚C -25˚C 0 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 8 ...

Page 4

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V = Pulsed T = -25˚ 25˚ 75˚ 125˚ 0.1 0 Drain Current - A ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 D(pulse) ...

Page 6

Data Sheet G14026EJ2V0DS PA1723 ...

Page 7

Data Sheet G14026EJ2V0DS PA1723 7 ...

Page 8

The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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