upa1757 Renesas Electronics Corporation., upa1757 Datasheet

upa1757

Manufacturer Part Number

upa1757

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1757.pdf (8 pages)

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Document No. D12910EJ3V0DS00 (3rd edition)

Date Published May 2001 NS CP (K)

Printed in Japan

designed for power management application of

notebook computers, and Li-ion battery application.

Ordering information

Absolute Maximum Ratings (T

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may

be applied to this device.

Features

Drain to source voltage

Gate to source voltage

Drain current (DC)

Drain current (pulse)

Total power dissipation (1 unit)

Total power dissipation (2 unit)

Channel temperature

Storage temperature

Notes 1. PW

Description

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

This product is Dual N-Channel MOS Field Effect Transistor

Dual MOS FET chips in small package

2.5 V gate drive type and low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package

(Power SOP8)

DS(on)1

DS(on)2

Part Number

2. T

PA1757G

iss

= 23 m

= 32 m

= 25 °C, Mounted on ceramic substrate of 2000 mm

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

iss

= 750 pF Typ.

s, Duty Cycle

Note1

MAX.) (V

Note2

Power SOP8

= 4.5 V, I

= 2.5 V, I

Package

1 %

N-CHANNEL POWER MOS FET

= 25 °C)

The mark

D(pulse)

D(DC)

GSS

DSS

stg

= 3.5 A)

INDUSTRIAL USE

DATA SHEET

SWITCHING

shows major revised points.

55 to +150

±12.0

MOS FIELD EFFECT TRANSISTOR

±7.0

±28

150

1.7

2.0

x 1.1 mm

5.37 Max.

Package Drawing (Unit : mm)

°C

0.40

1.27

+0.10

–0.05

0.78 Max.

Gate

Protection

Diode

0.12 M

7, 8

5, 6

0.5 ±0.2

; Source 1

; Gate 1

; Drain 1

; Source 2

; Gate 2

; Drain 2

6.0 ±0.3

4.4

PA1757

Source

Drain

Body

Diode

0.8

0.10

1998

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upa1757 Summary of contents

Page 1

Description This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. Features Dual MOS FET chips in small package 2.5 V gate drive type and low on-resistance R = ...

Page 2

Electrical Characteristics ( °C) A Characteristics Drain to source on-state resistance Gate to source cutoff voltage Forward transfer admittance Drain leakage current Gate to source leakage current Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise ...

Page 3

Typical Characteristics ( ° 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ˚C T =-50 A ˚ Drain Current - ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 40 V =2. 100 Channel Temperature -˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 MHz ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 6

Data Sheet D12910EJ3V0DS PA1757 ...

Page 7

Data Sheet D12910EJ3V0DS PA1757 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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