upa1759g Renesas Electronics Corporation., upa1759g Datasheet

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upa1759g

Manufacturer Part Number
upa1759g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
DESCRIPTION
Transistor designed for DC/DC converters.
FEATURES
The PA1759 is Dual N-channel MOS Field Effect
Dual chip type
Low on-resistance
R
R
Low input capacitance C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 2000 mm
3. Starting T
PA1759G
G13622EJ2V0DS00 (2nd edition)
June 2001 NS CP(K)
= 110 m
= 170 m
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty cycle
ch
TYP. (V
TYP. (V
Note1
C
= 25 °C, V
= 25°C)
Note3
Note3
DS
GS
iss
GS
GS
= 0 V)
= 0 V)
= 190 pF TYP.
= 10 V, I
= 4 V, I
Note2
Note2
DD
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
= 30 V, R
1 %
D
D
= 2.5 A)
A
= 2.5 A)
= 25 °C, All terminals are connected.)
INDUSTRIAL USE
I
D(pulse)
V
V
I
G
D(DC)
E
T
T
I
P
P
DSS
GSS
AS
DATA SHEET
= 25 , V
stg
AS
ch
The mark
T
T
SWITCHING
2
–55 to + 150
x 2.25 mm
GS
0.625
MOS FIELD EFFECT TRANSISTOR
shows major revised points.
150
1.7
2.0
2.5
60
= 20
5.0
20
20
0 V
8
1
PACKAGE DRAWING (Unit : mm)
5.37 Max.
mJ
°C
°C
W
W
V
V
A
A
A
0.40
1.27
+0.10
–0.05
0.78 Max.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
2
7, 8
3
4
5, 6
0.5 ±0.2
(1/2 Circuit)
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
6.0 ±0.3
PA1759
4.4
Source
Drain
©
Body
Diode
0.8
0.10
1999

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upa1759g Summary of contents

Page 1

DESCRIPTION The PA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES Dual chip type Low on-resistance R = 110 m TYP. (V DS(on 170 m TYP. (V DS(on)2 GS Low input capacitance C ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 10 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚ 75˚ 25˚ 55˚ Gate ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.4 Pulsed 100 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 2 0.1 0.01 10 100 L - Inductive Load - H 6 120 100 ...

Page 7

Data Sheet G13622EJ2V0DS PA1759 7 ...

Page 8

The information in this document is current as of June, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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