upa1790g Renesas Electronics Corporation., upa1790g Datasheet

upa1790g

Manufacturer Part Number

upa1790g

Description

Switching N-and P-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1790G.pdf (14 pages)

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Document No.

Date Published

Printed in Japan

designed for motor driver applications.

ORDERING INFORMATION

Remarks 1. This product is designed for consumer application and isn’t suitable for automotive application.

DESCRIPTION

FEATURES

The PA1790 is N-and P-Channel MOS Field Effect Transistor

Dual chip type

Low on-state resistance

N-Channel R

P-Channel R

Low input capacitance

N-Channel C

P-Channel C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

PART NUMBER

G14320EJ2V0DS00 (2nd edition)

March 2002 NS CP(K)

PA1790G

2. The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

DS(on)1

DS(on)2

DS(on)1

DS(on)2

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 180 pF TYP.

= 230 pF TYP.

= 0.45

= 0.74

= 0.12

= 0.19

N-AND P-CHANNEL POWER MOS FET

TYP. (V

Power SOP8

PACKAGE

= –10 V, I

= –4 V, I

= 10 V, I

= 4 V, I

The mark

DATA SHEET

SWITCHING

= 0.5 A)

= –0.35 A)

= 0.5 A)

= –0.35 A)

shows major revised points.

MOS FIELD EFFECT TRANSISTOR

Gate

Protection

Diode

N-Channel

Source

Drain

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

EQUIVALENT CIRCUIT

0.40

1.27

Body

Diode

+0.10

–0.05

0.78 MAX.

0.12 M

Gate

Protection

Diode

N-Channel

P-Channel

PA1790

0.5 ±0.2

6.0 ±0.3

4.4

P-Channel

7,8 ; Drain 1

5,6 ; Drain 2

Source

Drain

; Source 1

; Gate 1

; Source 2

; Gate 2

1999, 2002

Body

Diode

0.8

0.10

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upa1790g Summary of contents

Page 1

N-AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1790 is N-and P-Channel MOS Field Effect Transistor designed for motor driver applications. FEATURES Dual chip type Low on-state resistance N-Channel R = 0.12 TYP. (V DS(on 0.19 TYP. (V DS(on)2 ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-CHANNEL CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 4

P-CHANNEL CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate ...

Page 5

TYPICAL CHARACTERISTICS (T A N-CHANNEL DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 10 ...

Page 6

FORWARD TRANSFER CHARACTERISTICS 10 Pulsed 150˚ 25˚ 75˚ 55˚C A 0.1 0. Gate to Source Voltage - ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.4 Pulsed 100 T - Channel Temperature - ˚C ch ...

Page 8

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 0 0.1 0. Starting T 0.001 10 100 Inductive Load - H 8 120 100 ...

Page 9

TYPICAL CHARACTERISTICS (T A P-CHANNEL DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 10 ...

Page 10

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚ 25˚ 125˚ 0 Gate to Source Voltage - ...

Page 11

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1.6 Pulsed 100 T - Channel Temperature - ˚C ch ...

Page 12

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 0. 0.1 0. Starting T 0.001 10 100 Inductive Load - H 12 120 100 ...

Page 13

Data Sheet G14320EJ2V0DS PA1790 13 ...

Page 14

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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