upa1772 Renesas Electronics Corporation., upa1772 Datasheet

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upa1772

Manufacturer Part Number
upa1772
Description
Switching P-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1772.pdf (6 pages)

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Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
upa1772G
Quantity:
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Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa1772G-E1
Manufacturer:
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Quantity:
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Company:
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Part Number:
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Manufacturer:
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Quantity:
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Document No. G15830EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
Transistor designed for power management applications
of portable machines.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (2 unit)
Total Power Dissipation (1 unit)
Channel Temperature
Storage Temperature
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The
Dual chip type
Low on-state resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. T
PA1772 is Dual P-Channel MOS Field Effect
iss
PA1772G
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device..
= 20.0 m
= 29.5 m
= 34.0 m
: C
A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 25°C, Mounted on ceramic substrate of 2000 mm
iss
= 1500 pF TYP. (V
10 s, Duty cycle
MAX. (V
MAX. (V
MAX. (V
Note1
DS
GS
= 0 V)
GS
GS
GS
= 0 V)
Note2
Note2
= 10 V, I
= 4.5 V, I
= 4.0 V, I
P-CHANNEL POWER MOS FET
DS
Power SOP8
PACKAGE
1%
= 10 V, V
A
D
D
D
= 25°C, All terminals are connected.)
= 4 A)
= 4 A)
= 4 A)
DATA SHEET
GS
SWITCHING
= 0 V)
I
D(pulse)
V
I
V
D(DC)
T
T
P
P
DSS
GSS
stg
ch
T
T
MOS FIELD EFFECT TRANSISTOR
–55 to + 150
2
m20
m32
150
2.0
1.7
m8
x 2.2 mm
30
8
1
PACKAGE DRAWING (Unit : mm)
5.37 MAX.
0.40
1.27
°C
°C
W
W
V
V
A
A
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
PA1772
(1/2 circuit)
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
4.4
Source
Drain
Body
Diode
0.8
0.10
2001, 2003

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upa1772 Summary of contents

Page 1

DESCRIPTION The PA1772 is Dual P-Channel MOS Field Effect Transistor designed for power management applications of portable machines. FEATURES Dual chip type Low on-state resistance R = 20.0 m MAX DS(on 29.5 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1 00 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 4 4 0.2 - 0.4 - 0 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 100 T - Channel Temperature - °C ch ...

Page 6

The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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