upa1914te Renesas Electronics Corporation., upa1914te Datasheet

upa1914te

Manufacturer Part Number

upa1914te

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1914TE.pdf (8 pages)

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Document No. D13810EJ2V0DS00 (2nd edition)

Date Published May 2001 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 4 V power source.

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1914 features a low on-state resistance and excellent

Can be driven by a 4 V power source

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on FR-4 Board, t

PA1914 is a switching device which can be driven

PA1914TE

= 57 m

= 86 m

= 96 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

Note1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note2

SC-95 (Mini Mold Thin Type)

= –10 V, I

= –4.5 V, I

= –4.0 V, I

1 %

PACKAGE

5 sec.

The mark ! ! ! ! shows major revised points.

= –2.5 A)

= –2.5A)

= 25°C)

D(pulse)

DATA SHEET

FOR SWITCHING

D(DC)

DSS

GSS

stg

–55 to +150

±4.5

MOS FIELD EFFECT TRANSISTOR

–30

±20

±18

150

0.2

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit : mm)

0.95

2.9 ±0.2

1.9

0.95

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Marking: TF

1, 2, 5, 6 : Drain

PA1914

: Gate

: Source

Source

Drain

0.9 to 1.1

0.65

Body

Diode

0.16

0 to 0.1

1998, 1999

+0.1

–0.06

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upa1914te Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1914 is a switching device which can be driven directly power source. The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 100 T = 125˚ 75˚ 25˚ 25˚ 0.01 0 Drain ...

Page 5

SWITCHING CHARACTERISTICS 1000 100 15V 10V 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 4 ...

Page 6

Data Sheet D13810EJ2V0DS PA1914 ...

Page 7

Data Sheet D13810EJ2V0DS PA1914 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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