gvt7364a16 ETC-unknow, gvt7364a16 Datasheet

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gvt7364a16

Manufacturer Part Number
gvt7364a16
Description
+3.3v Supply, Single Chip Enable Revolutionary Pinout
Manufacturer
ETC-unknow
Datasheet

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FEATURES
• Fast access times: 10, 12, 15 and 20ns
• Fast OE# access times: 5, 6, 7 and 8ns
• Single +3.3V +0.3V power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
OPTIONS
• Timing
• Packages
• Power consumption
• Temperature
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 10/97
GALVANTECH
ASYNCHRONOUS
SRAM
double-poly, double-metal process
TSOP
10ns access
12ns access
15ns access
20ns access
44-pin SOJ (400 mil)
44-pin TSOP (400 mil)
Standard
Low
Commercial
Industrial
Fax (408) 566-0699
MARKING
-10
-12
-15
-20
J
TS
None
L
None
I
(
(
0°C
-40°C
, INC.
to
70°C)
to
85°C)
REVOLUTIONARY PINOUT 64K X 16
GENERAL DESCRIPTION
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
is not selected. This allows system designers to meet low
standby power requirements.
The GVT7364A16 is organized as a 65,536 x 16 SRAM
This device offers center power and ground pins for
The device offers a low power standby mode when chip
64K x 16 SRAM
+3.3V SUPPLY, SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
WE#
VCC
DQ5
DQ6
DQ7
DQ8
DQ1
DQ2
DQ3
DQ4
CE#
VSS
A15
A14
A13
A12
NC
A4
A3
A2
A1
A0
PIN ASSIGNMENT
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
44-Pin TSOP
44-Pin SOJ
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
GVT7364A16
Galvantech, Inc. reserves the right to change
products or specifications without notice.
BLE#
DQ16
DQ15
DQ14
DQ13
VSS
VCC
DQ12
DQ11
NC
A8
A9
A10
A11
NC
A5
A6
A7
OE#
BHE#
DQ10
DQ9

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gvt7364a16 Summary of contents

Page 1

... REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT GENERAL DESCRIPTION The GVT7364A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology. ...

Page 2

... FUNCTIONAL BLOCK DIAGRAM VCC VSS A0 A15 October 6, 1997 Rev. 10/97 , INC. REVOLUTIONARY PINOUT 64K X 16 MEMORY ARRAY 512 ROWS X 128 X 16 COLUMNS POWER COLUMN DECODER DOWN 2 GVT7364A16 BLE# DQ1 DQ8 DQ9 DQ16 CE# BHE# WE# OE# Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 3

... BLE# is LOW, the data is written to or read from the lower byte (DQ1-DQ8). When BHE# is LOW, the data is written to or read from the higher byte (DQ9-DQ16). Input Output Enable: This active LOW input enables the output drivers. DQ9-DQ16. + Power Supply: 3.3V 0.3V Ground 3 GVT7364A16 DQ1- DQ9- BHE# POWER DQ8 DQ16 H Q HIGH-Z ...

Page 4

... VCC SYM TYP ; VCC =MAX; Icc 70 standard IL standard I 10 MAX SB1 standard I 0.02 SB2 CONDITIONS SYMBOL MHz C I VCC = 3.3V C I/O 4 GVT7364A16 MIN MAX UNITS 2.2 VCC+0.5 V -0.5 0 2.4 V 0.4 V 3.0 3.6 V -10 -12 -15 -20 POWER 190 160 130 100 low ...

Page 5

... WP2 WP1 LZWE 3 4 HZWE GVT7364A16 - MAX MIN MAN UNITS NOTES ...

Page 6

... For -10 part, the output capacitive load is 10pF (instead of 30pF) HZCE is less and VCC = 3.135V to 3.6V variation. CONDITIONS SYMBOL Vcc = 2V CCDR I Vcc = 3V CCDR t CDR GVT7364A16 1.5V Fig. 1 OUTPUT LOAD EQUIVALENT 3.3v 317 DQ 351 5 pF Fig. 2 OUTPUT LOAD EQUIVALENT o C and 20ns cycle time. MIN TYP MAX ...

Page 7

... READ CYCLE NO VALID (7, 8, 10, 12) READ CYCLE NO AOE t LZOE t ACE t LZCE HIGH Z 7 GVT7364A16 3. DATA VALID t HZCE t HZOE DATA VALID DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 8

... WP2 AS DATA VALID t HZWE (12, 13) WRITE CYCLE NO WP1 AS DATA VALID HIGH Z 8 GVT7364A16 LZWE HIGH DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 9

... DATA VALID HIGH Z (12, 13) WRITE CYCLE NO. 4 (Byte Enable Controlled WP1 DATA VALID HIGH Z 9 GVT7364A16 DON'T CARE DON'T CARE Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 10

... TYP .020 (0.51) .015 (0.38) MAX or typical, min where noted. MIN .741 (18.81) .721 (18.31) .0315 (0.80) TYP .018 (0.45) .010 (0.25) .047 (1.20) MAX MAX or typical, max where noted. MIN 10 GVT7364A16 .445 (11.30) .435 (11.05) .148 (3.76) .138 (3.51) .030 (0.76) MIN .095 (2.41) .080 (2.03) .380 (9.65) .360 (9.14) .467 (11.86) .459 (11.66) .007 (0.18) .005 (0.12) .032 (0.80) .024 (0.60) ...

Page 11

... Ordering Information GVT 7364A16 Galvantech Prefix Part Number October 6, 1997 Rev. 10/97 , INC. REVOLUTIONARY PINOUT 64K GVT7364A16 Temperature (Blank = Commercial I = Industrial) Power (Blank= Standard, L= Low Power) Speed (10 = 10ns, 12= 12ns 15 = 15ns 20ns) Package (J = 400 mil SOJ TSOP TYPE II) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

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