gvt72256a16 ETC-unknow, gvt72256a16 Datasheet

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gvt72256a16

Manufacturer Part Number
gvt72256a16
Description
Revolutionary Pinout 256k
Manufacturer
ETC-unknow
Datasheet
FEATURES
• Fast access times: 12, 15and 20ns
• Fast OE# access times: 6, 7 and 8ns
• Single +5V +10% power supply
• Fully static -- no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise immunity
• Easy memory expansion with CE# and OE# options
• Automatic CE# power down
• High-performance, low-power consumption, CMOS
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
OPTIONS
• Timing
• Packages
• Power consumption
• Temperature
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688
Rev. 1/97
GALVANTECH
ASYNCHRONOUS
SRAM
double-poly, double-metal process
TSOP
12ns access
15ns access
20ns access
44-pin SOJ (400 mil)
44-pin TSOP (400 mil)
Standard
Low
Commercial
Industrial
Fax (408) 566-0699
MARKING
-12
-15
-20
J
TS
None
L
None
I
(
(
0°C
-40°C
, INC.
to
70°C)
to
85°C)
REVOLUTIONARY PINOUT 256K X 16
GENERAL DESCRIPTION
SRAM using a four-transistor memory cell with a high
performance, silicon gate, low-power CMOS process.
Galvantech SRAMs are fabricated using double-layer
polysilicon, double-layer metal technology.
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
is not selected. This allows system designers to meet low
standby power requirements.
The GVT72256A16 is organized as a 262,144 x 16
This device offers center power and ground pins for
The device offers a low power standby mode when chip
256K x 16 SRAM
+5V SUPPLY
REVOLUTIONARY PINOUT
WE#
VCC
DQ5
DQ6
DQ7
DQ8
DQ1
DQ2
DQ3
DQ4
CE#
VSS
A1
A2
A3
A4
A0
A5
A6
A7
A8
A9
ADVANCE INFORMATION
PIN ASSIGNMENT
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
44-Pin TSOP
44-Pin SOJ
GVT72256A16
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Galvantech, Inc. reserves the right to change
products or specifications without notice.
BLE#
DQ16
DQ15
DQ14
DQ13
VSS
VCC
DQ12
DQ11
DQ10
DQ9
NC
A14
A13
A12
A11
A10
A17
A16
A15
OE#
BHE#

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gvt72256a16 Summary of contents

Page 1

... REVOLUTIONARY PINOUT 256K X 16 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT GENERAL DESCRIPTION The GVT72256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high performance, silicon gate, low-power CMOS process. Galvantech SRAMs are fabricated using double-layer polysilicon, double-layer metal technology. ...

Page 2

... VSS A0 A17 January 23, 1997 Rev. 1/97 , INC. REVOLUTIONARY PINOUT 256K X 16 MEMORY ARRAY 512 ROWS X 512 X 16 COLUMNS POWER COLUMN DECODER DOWN 2 ADVANCE INFORMATION GVT72256A16 BLE# DQ1 DQ8 DQ9 DQ16 CE# BHE# WE# OE# Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 3

... BLE# is LOW, the data is written to or read from the lower byte (DQ1-DQ8). When BHE# is LOW, the data is written to or read from the higher byte (DQ9-DQ16). Input Output Enable: This active LOW input enables the output drivers. DQ9-DQ16. + Power Supply: 5V 10% Ground 3 ADVANCE INFORMATION GVT72256A16 DQ1- DQ9- BHE# POWER DQ8 DQ16 H Q HIGH-Z ACTIVE ...

Page 4

... OL VCC SYM TYP ; VCC =MAX; Icc 120 standard IL standard I 20 MAX SB1 standard I 0.1 SB2 CONDITIONS SYMBOL MHz C I VCC = 5V C I/O 4 ADVANCE INFORMATION GVT72256A16 MIN MAX UNITS 2.2 VCC+1 V -0.5 0 2.4 V 0.4 V 4.5 5.5 V -12 -15 -20 UNITS POWER 240 200 170 ...

Page 5

... WP2 WP1 LZWE 4 5 HZWE ADVANCE INFORMATION GVT72256A16 - 20 MAN UNITS NOTES ...

Page 6

... Fig. 1. 14. Typical values are measured at 5V HZCE is less CONDITIONS SYMBOL Vcc = 2V CCDR I Vcc = 3V CCDR t CDR ADVANCE INFORMATION GVT72256A16 1.5V Fig. 1 OUTPUT LOAD EQUIVALENT +5V 480 Q 255 and 20ns cycle time. MIN TYP MAX UNITS 2 V ...

Page 7

... VALID (7, 8, 10, 12) READ CYCLE NO ABE t AOE t LZOE t LZBE t ACE t LZCE HIGH Z 7 ADVANCE INFORMATION GVT72256A16 4. DATA VALID t HZCE t HZBE t HZOE DATA VALID DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 8

... DATA VALID t HZWE (12, 13) WRITE CYCLE NO WP1 DATA VALID HIGH Z 8 ADVANCE INFORMATION GVT72256A16 LZWE HIGH DON'T CARE UNDEFINED Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 9

... HIGH Z (12, 13) WRITE CYCLE NO. 4 (Byte Enable Controlled WP1 DATA VALID HIGH Z 9 ADVANCE INFORMATION GVT72256A16 DON'T CARE DON'T CARE Galvantech, Inc. reserves the right to change products or specifications without notice. ...

Page 10

... MAX or typical, min where noted. MIN .741 (18.81) .721 (18.31) .0315 (0.80) TYP .018 (0.45) .010 (0.25) .047 (1.20) MAX MAX or typical, max where noted. MIN 10 ADVANCE INFORMATION GVT72256A16 .445 (11.30) .435 (11.05) .148 (3.76) .138 (3.51) .030 (0.76) MIN .095 (2.41) .080 (2.03) .380 (9.65) .360 (9.14) .467 (11.86) .459 (11.66) .007 (0.18) .005 (0.12) .032 (0.80) .024 (0.60) ...

Page 11

... GVT 72256A16 Galvantech Prefix Part Number January 23, 1997 Rev. 1/97 , INC. REVOLUTIONARY PINOUT 256K ADVANCE INFORMATION GVT72256A16 Temperature (Blank = Commercial I = Industrial) Power (Blank= Standard, L= Low Power) Speed ( 12 = 12ns 15 = 15ns 20ns) Package (J = 400 mil SOJ TSOP TYPE II) Galvantech, Inc. reserves the right to change products or specifications without notice. ...

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