ao4402 ETC-unknow, ao4402 Datasheet

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ao4402

Manufacturer Part Number
ao4402
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
ETC-unknow
Datasheet

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Part Number
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Part Number:
AO4402
Manufacturer:
AO
Quantity:
40 000
Part Number:
AO4402
Manufacturer:
AO
Quantity:
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Part Number:
ao4402G
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Quantity:
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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4402 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
AO4402
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
A
SOIC-8
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
G
Symbol
Features
V
I
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 12A
D
S
(V) = 30V
< 14mΩ (V
< 16mΩ (V
< 22mΩ (V
Maximum
-55 to 150
±12
Typ
2.1
30
12
10
80
23
48
12
3
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
Max
40
65
16
March 2002
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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ao4402 Summary of contents

Page 1

... AO4402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4402 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications SOIC-8 ...

Page 2

... AO4402 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10V 4. 2. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40.0 30.0 125°C 20.0 25°C 10.0 0.0 0.0 2.0 4.0 V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. ...

Page 4

... AO4402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =12A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 1.0 T =150°C J(Max) T =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA ...

Page 5

ALPHA & OMEGA SEMICONDUCTOR, INC. PACKAGE MARKING DESCRIPTION NOTE AOS LOGO PARTN - PART NUMBER CODE FAB LOCATION A - ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE ASSEMBLY LOT CODE ...

Page 6

ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data ...

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