ao4408 Alpha & Omega Semiconductor, ao4408 Datasheet

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ao4408

Manufacturer Part Number
ao4408
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
AO4408
Manufacturer:
AOS/万代
Quantity:
20 000
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4408/L uses advanced trench technology to
provide excellent R
switching. This device makes an excellent high side
switch for notebook CPU core DC-DC conversion.
AO4408 and AO4408L are electrically identical.
-RoHS Compliant
-AO4408L is Halogen Free
AO4408
N-Channel Enhancement Mode Field Effect Transistor
S
S
S
G
AF
SOIC-8
B
DS(ON)
D
D
D
D
B
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, low gate charge and fast
C
B
L=0.3mH
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
T
D
DM
AV
DS
GS
AV
D
J
, T
STG
G
Symbol
Features
V
I
R
R
R
R
D
DS
DS(ON)
DS(ON)
θJA
θJL
= 12A
D
S
(V) = 30V
< 13mΩ (V
< 16mΩ (V
Maximum
-55 to 150
Typ
±12
135
2.1
30
12
10
80
30
23
48
12
3
(V
GS
GS
GS
Rg,Ciss,Coss,Crss Tested
= 10V)
= 10V)
= 4.5V)
Max
40
65
16
UIS Tested
Units
Units
°C/W
°C/W
°C/W
www.aosmd.com
mJ
°C
W
V
V
A
A

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ao4408 Summary of contents

Page 1

... AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4408/L uses advanced trench technology to provide excellent R , low gate charge and fast DS(ON) switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408 and AO4408L are electrically identical. ...

Page 2

... AO4408 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 10V 4. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 30 125°C 20 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...

Page 4

... AO4408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =12A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 1ms 10.0 10ms 0.1s 1s 1.0 10s T =150°C J(Max) T =25° 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...

Page 5

... AO4408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ⋅ − 0.00001 0.0001 Time in avalanche, t Figure 12: Avalanche capability Alpha & Omega Semiconductor, Ltd =25° 0.001 25 (s) A 10s Steady- State 50 75 100 125 T (°C) CASE Figure 13: Power De-rating (Note A) www ...

Page 6

... AO4408 + Vgs Ig Vds Vgs Rg Vgs Vds Id Vgs Rg Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms R L Vds + DU T Vdd ...

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