m28f101-100xp6 STMicroelectronics, m28f101-100xp6 Datasheet

no-image

m28f101-100xp6

Manufacturer Part Number
m28f101-100xp6
Description
128k Chip Erase Flash Memory
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganised as 128K bytes of 8 bits. It uses a command
register architecture to select the operating modes
and thus provides a simple microprocessor inter-
face. The M28F101 FLASH Memory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speed microprocessor systems.
Table 1. Signal Names
April 1997
– Stand-by Current: 100 A max
– Manufacturer Code: 20h
– Device Code: 07h
5V 10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMING TIME: 10 s typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
10,000 ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
A0-A16
DQ0-DQ7
E
G
W
V
V
V
PP
CC
SS
Address Inputs
Data Inputs / Outputs
Chip Enable
Output Enable
Write Enable
Program Supply
Supply Voltage
Ground
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
Figure 1. Logic Diagram
32
A0-A16
PDIP32 (P)
1
W
G
E
17
V CC
TSOP32 (N)
V SS
M28F101
8 x 20 mm
V PP
M28F101
PLCC32 (K)
8
DQ0-DQ7
AI00666B
1/23

Related parts for m28f101-100xp6

m28f101-100xp6 Summary of contents

Page 1

... It uses a command register architecture to select the operating modes and thus provides a simple microprocessor inter- face. The M28F101 FLASH Memory is suitable for applications where the memory has to be repro- grammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems ...

Page 2

... DQ3 DQ2 DQ2 DQ1 DQ1 DQ0 DQ0 Warning Not Connected A14 A13 A8 A9 M28F101 25 A11 G A10 E DQ7 17 AI00668 A11 A13 A14 NC W M28F101 (Reverse A16 A15 A12 AI00670C ...

Page 3

... For all Read Only Modes, except Standby Mode, the Write Enable input W should be High. In the Standby Mode this input is don’t care. Read Mode. The M28F101 has two enable inputs, E and G, both of which must be Low in order to output data from the memory. The Chip Enable (E) is the power control and should be used for device selection ...

Page 4

... M28F101 (1) Table 3. Operations V Operation PP Read Output Disable Read Only V PPL Standby Electronic Signature Read (2) Write Read/Write V PPH Output Disable Standby Notes Refer also to the Command table. Table 4. Electronic Signature Identifier A0 DQ7 Manufacturer’s Code Device Code ...

Page 5

... If the end of Erase or Programming operations are not terminated by a Verify cycle within a maximum time permitted, an internal stop timer automatically stops the opera- tion. The device remains in an inactive state, ready to start a Verify or Reset Mode operation. M28F101 10ns 0.45V to 2.4V 0.8V and 2V 1N914 3.3k ...

Page 6

... M28F101 Table 8. DC Characteristics ( – –40 to 125 Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC Supply Current (Standby) TTL I CC1 Supply Current (Standby) CMOS (1) I Supply Current (Programming) CC2 (1) I Supply Current (Program Verify) ...

Page 7

... The Electronic Signature Mode is set-up by writing 90h to the command register. The following read cycles, with address inputs 00000h or 00001h, output the manufacturer or device type codes. The command is terminated by writing an- other valid command to the command register (for example Reset). M28F101 -100 Unit =5V 10% CC EPROM Interface ...

Page 8

... The write cycle is then repeated to start the erase operation. Erasure starts on the rising edge of W during this second cycle. Erase is followed by an Erase Verify which reads an ad- dressed byte. 8/23 V 6.5V) PP M28F101 -120 -150 Test Condition V =5V 10% V =5V 10 ...

Page 9

... DQ0-DQ7 Figure 6. Read Command Waveforms V PP tVPHEL A0-A16 E tELWL G tGHWL W tWLWH tDVWH DQ0-DQ7 COMMAND READ SET-UP tAVAV tAVQV tELQV tEHQZ tELQX tGHQZ DATA OUT tAVQV tWHEH tELQV tWHGL tWHDX M28F101 tAXQX AI00671 VALID tAXQX tEHQZ tGHQZ tGLQV DATA OUT READ AI00672 9/23 ...

Page 10

... M28F101 Figure 7. Electronic Signature Command Waveforms V PP tVPHEL A0-A16 E tELWL G tGHWL W tWLWH tDVWH DQ0-DQ7 COMMAND READ ELECTRONIC SIGNATURE SET-UP READ/WRITE MODES (cont’d) As the Erase algorithm flow chart shows, when the data read during Erase Verify is not FFh, another Erase operation is performed and verification con- tinues from the address of the last verifiedbyte ...

Page 11

... M28F101 Unit Max 100 ns ns 100 ...

Page 12

... GLQV OE (1) t Chip Enable High to Output Hi-Z EHQZ ( Output Enable High to Output Hi-Z GHQZ Address Transition to Output Transition AXQX OH Note: 1. Sampled only, not 100% tested. 12/23 M28F101 -120 -150 -200 V =5V 10% V =5V 10% V =5V 10 EPROM EPROM EPROM Interface Interface Interface ...

Page 13

... Figure 8. Erase Set-up and Erase Verify Commands Waveforms, W Controlled M28F101 13/23 ...

Page 14

... M28F101 Figure 9. Erase Set-up and Erase Verify Commands Waveforms, E Controlled 14/23 ...

Page 15

... Figure 10. Program Set-up and Program Verify Commands Waveforms, W Controlled M28F101 15/23 ...

Page 16

... M28F101 Figure 11. Program Set-up and Program Verify Commands Waveforms, E Controlled 16/23 ...

Page 17

... C0h to the command register, followed by a read cycle and a compare of the data read to the data expected. During Program and Program Verify op- erations a MARGIN MODE circuit is activated to guaranteethat the cell is programmed with a safety margin. M28F101 12V PROGRAM SET-UP Latch Addr, Data Wait 10 s ...

Page 18

... M28F101 ORDERING INFORMATION SCHEME Example: M28F101 Operating Voltage F 5V Speed Power Supplies -70 70ns blank -90 90ns X -100 100ns -120 120ns -150 150ns -200 200ns Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the SGS-THOMSON Sales Office nearest to you ...

Page 19

... M28F101 inches Min Max 0.190 0.015 – – – 0.016 0.020 0.045 0.055 0.008 0.012 1.645 1.655 0.600 0.625 0.530 0.550 – – – – 0.125 0.135 0.070 ...

Page 20

... M28F101 PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular mm Symb Typ A 2.54 A1 1.52 B 0.33 B1 0.66 D 12.32 D1 11.35 D2 9.91 E 14.86 E1 13.89 E2 12. PLCC32 PLCC Drawing is not to scale. 20/23 Min Max Typ 3.56 2.41 0.53 0.81 12.57 11.56 10.92 15.11 14.10 13.46 – – 0.050 0. D2/E2 B inches Min Max 0.100 0.140 0.060 0.095 ...

Page 21

... DIE TSOP-a Drawing is not to scale. Min Max Typ 1.24 0.20 1.06 0.27 0.21 20.12 18.49 8.10 – – 0.020 0. 0. M28F101 inches Min Max 0.041 0.049 0.002 0.008 0.037 0.042 0.006 0.011 0.004 0.008 0.783 0.792 0.718 0.728 0.311 0.319 – – 0.012 0.028 0.004 ...

Page 22

... M28F101 TSOP32 Reverse Pinout - 32 lead Plastic Thin Small Outline 20mm mm Symb Typ A 1.04 A1 0.05 A2 0.95 B 0.15 C 0.10 D 19.90 D1 18.24 E 7.90 e 0. TSOP32 1 N DIE TSOP-b Drawing is not to scale. 22/23 Min Max Typ 1.24 0.20 1.06 0.27 0.21 20.12 18.49 8.10 – – 0.020 0. 0. inches Min Max 0.041 0.049 ...

Page 23

... SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. M28F101 23/23 ...

Related keywords