cn1016 New Continental Device India Limited, cn1016 Datasheet

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cn1016

Manufacturer Part Number
cn1016
Description
Npn Silicon Plastic Power Darlington Transistor
Manufacturer
New Continental Device India Limited
Datasheet
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Continental Device India Limited
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Collector Power Dissipation @ Tc=25 deg C
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
Collector Output Capacitance
NPN SILICON PLASTIC POWER DARLINGTON TRANSISTOR
Continental Device India Limited
Peak t=30ms
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
ICBO
IEBO
VCEO
hFE
VCE(Sat)
VBE(Sat)
ft
Cob
SYMBOL
Data Sheet
VCB=160V, IE=0
VEB=5V, IC=0
IC=30mA, IB=0
IC=6A, VCE=4V
IC=10A, VCE=4V
IC=6A, IB=6mA
IC=6A, IB=6mA
VCE=12V, IC=1A,
VCB=10V, IE=0
f=1MHz
TEST CONDITION
-55 to +150
VALUE
MIN
160
150
150
150
5.0
1.0
2.0
1.0
10
15
60
-
-
-
-
-
-
TYP
80
85
-
-
-
-
-
-
-
MARKING:-
MAX
100
3.0
2.5
3.0
20
-
-
-
-
Page 1 of 2
(9AW)
CN1016
TO-3P
deg C
deg C
UNIT
UNIT
MHz
1016
mA
uA
pF
W
CN
V
V
V
A
A
A
V
K
K
V
V

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cn1016 Summary of contents

Page 1

... Tj Tstg -55 to +150 SYMBOL TEST CONDITION ICBO VCB=160V, IE=0 IEBO VEB=5V, IC=0 VCEO IC=30mA, IB=0 hFE IC=6A, VCE=4V IC=10A, VCE=4V VCE(Sat) IC=6A, IB=6mA VBE(Sat) IC=6A, IB=6mA ft VCE=12V, IC=1A, Cob VCB=10V, IE=0 f=1MHz Data Sheet CN1016 (9AW) TO-3P MARKING:- CN 1016 VALUE UNIT 160 V 150 150 deg C deg C ...

Page 2

Packing Detail PACKAGE STANDARD PACK Details Net Weight/Qty TO-3P 100 pcs/polybag 628 gm/100 pcs The product information and the selection guides facilitate selection of the ...

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