APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet

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APT50GT120B2RDL

Manufacturer Part Number
APT50GT120B2RDL
Description
Resonant Mode IGBT
Manufacturer
MICROSEMI [Microsemi Corporation]
Datasheet
TYPICAL PERFORMANCE CURVES
The Thunderbolt IGBT
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT
fers superior ruggedness and ultrafast switching speed.
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
• Ultrasoft Recovery Diode
V
Symbol
Symbol
T
V
V
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
CES
T
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
®
Resonant Mode IGBT
used in this Resonant Mode Combi is a new generation of high
F
)
• SSOA Rated
• RoHS Compliant
1
(V
CE
CE
CE
@ T
8
= V
= 1200V, V
= 1200V, V
Microsemi Website - http://www.microsemi.com
@ T
GE
GE
C
C
GE
GE
= 150°C
J
= 110°C
= 15V, I
= 15V, I
C
= 150°C
, I
= ±20V)
= 25°C
C
GE
= 2mA, T
GE
GE
C
C
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
j
C
Typical Applications
Induction Heating
Welding
Medical
High Power Telecom
Resonant Mode Phase Shifted
Bridge
= 25°C)
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
®
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
C
of-
= 25°C unless otherwise specifi ed.
APT50GT120B2RDL(G)
1200
APT50GT120B2RDL(G)
MIN
4.5
2.7
150A @ 1200V
-55 to 150
APT50GT120B2RDL(G)
1200
106
150
694
300
TYP
±30
5.5
3.2
4.0
50
5
1200V
G
1500
MAX
300
300
6.5
3.7
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
μA
nA
Ω

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APT50GT120B2RDL Summary of contents

Page 1

... T = 125° ±20V) GE Microsemi Website - http://www.microsemi.com 1200V APT50GT120B2RDL(G) APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® of 25°C unless otherwise specifi ed. C APT50GT120B2RDL(G) 1200 ±30 106 50 150 150A @ 1200V 694 -55 to 150 300 MIN TYP MAX 1200 4.5 5.5 6.5 2 ...

Page 2

... J 6 Inductive Switching (125° 800V 15V 50A 4.7Ω +125° nor gate driver impedance. G(int) APT50GT120B2RDL(G) MIN TYP MAX 2500 250 = 25V 155 7.5 240 20 110 150 = 1200V 23 50 215 26 7 3585 4835 1910 ...

Page 3

... 25° 100A C = 50A 25A 100 125 150 APT50GT120B2RDL(G) 150 15V 13V 125 11V 100 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° ...

Page 4

... FIGURE 14, Turn Off Energy Loss vs Collector Current 25,000 V = 800V 5Ω G 20,000 15,000 10,000 5,000 100A off, E off, 25A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT50GT120B2RDL(G) =15V,T =125° =15V,T =25° 800V 5Ω 110 = = = R 5Ω, L 100 H, V 800V μ ...

Page 5

... diss cond f = max2 on2 off diss R θ 100 APT50GT120B2RDL(G) 160 140 120 100 200 400 600 800 1000 1200 1400 V , COLLECTOR TO EMITTER VOLTAGE CE Figure 18,Minimim Switching Safe Operating Area Note ...

Page 6

... Gate Voltage t d(off) 90% Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Defi nitions 10% t d(on) Figure 22, Turn-on Switching Waveforms and Defi nitions T = 125° APT50GT120B2RDL(G) Gate Voltage t r Collector Current 90 10% Collector Voltage Switching Energy T = 125°C J ...

Page 7

... 800V 30A, di /dt = -1000A/μ 800V SINGLE PULSE - RECTANGULAR PULSE DURATION (seconds) APT50GT120B2RDL(G) = 25°C unless otherwise specifi ed. C APT50GT120B2RDL( MIN TYP 1.6 2.0 1.6 MIN TYP = 25° 592 - 2694 = 25° ...

Page 8

... FIGURE 5, Reverse Recovery Current vs. Current Rate of Change 100 125 150 25 FIGURE 7, Maximum Average Forward Current vs. Case Temperature 800 APT50GT120B2RDL( 125° 800V R 60A 30A 15A 200 400 600 800 1000 /dt, CURRENT RATE OF CHANGE (A/μ 125° ...

Page 9

... Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT50GT120B2RDL(G) D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 4 5 0.25 I RRM 3 2 5.38 (.212) 6.20 (.244) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) Gate ...

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