UFB200FA40P_10 VISHAY [Vishay Siliconix], UFB200FA40P_10 Datasheet
UFB200FA40P_10
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UFB200FA40P_10 Summary of contents
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Insulated Ultrafast Rectifier Module, 200 A SOT-227 PRODUCT SUMMARY °C per module F(AV Note (1) Maximum I current admitted 100 not exceed the RMS maximum termperature ...
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UFB200FA40P Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T PARAMETER Cathode to anode breakdown voltage Forward voltage Reverse leakage current Junction capacitance DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (T PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge THERMAL - MECHANICAL ...
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T = 150 ° 125 ° ° 0.4 0 Forward Voltage Drop (V) F Fig Typical Forward Voltage Drop Characteristics (Per Diode) 1 ...
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UFB200FA40P Vishay Semiconductors 160 140 120 100 Square wave (D = 0.50) Rated V applied See note ( 120 160 I - Average Forward Current (A) F(AV) Fig ...
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(1) dI /dt - rate of change of current F through zero crossing ( peak reverse recovery current RRM ( reverse recovery time measured rr from zero crossing point of negative going I ...
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UFB200FA40P Vishay Semiconductors ORDERING INFORMATION TABLE Device code Quantity per tube is 10, M4 screw and washer included CIRCUIT CONFIGURATION Dimensions Packaging information www.vishay.com For technical questions within your region, please contact one ...
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Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 SOT-227 38.30 (1.508) 37.80 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...