LS4416A_SOT-23 MICROSS [Micross Components], LS4416A_SOT-23 Datasheet

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LS4416A_SOT-23

Manufacturer Part Number
LS4416A_SOT-23
Description
N-Channel high frequency JFET amplifier
Manufacturer
MICROSS [Micross Components]
Datasheet
 
LS4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
LS4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
The LS4416A N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The SOT-23 package provides ease of manufacturing,
and a lower cost assembly option.
LS4416A Benefits:
LS4416A Applications:
Micross Components Europe
Tel: +44 1603 788967
Email:
Web:
SYMBOL 
SYMBOL 
NOTES 
V
BV
C
b
GS(off)
I
I
C
g
G
C
g
b
NF 
g
G
g
e
DSS
GSS
oss
oss
oss
rss
Iss
Iss
os
iss
http://www.micross.com/distribution
GSS
fs
ps
n
fs
chipcomponents@micross.com
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Click To Buy
Linear Systems replaces discontinued Siliconix 2N4416A
The LS4416A is a N-Channel high frequency JFET amplifier
1 . Absolute maximum ratings are limiting values above which LS4416A serviceability may be impaired.  
2.  Not production tested, guaranteed by design 
Gate to Source Breakdown Voltage 
Gate to Source Saturation Current 
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Equivalent Input Noise Voltage 
Reverse Transfer Capacitance
Gate to Source Cutoff Voltage 
Forward Transconductance 
Forward Transconductance 
Gate Leakage Current 
Output  Susceptance
Output Conductance 
Output Conductance 
Output Capacitance
Input Susceptance
Input Capacitance
Input Conductance 
CHARACTERISTIC 
CHARACTERISTIC 
Noise Figure
Power Gain
2
2
 
 
2
2
 
2
 
2
 
 
2
 
Available Packages:
LS4416A in SOT-23
LS4416A in bare die.
Please contact Micross for full
package and die dimensions
4500 
MIN 
‐2.5 
‐35 
MIN 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
18 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
N-CHANNEL JFET
100 Mhz 
LS4416A
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX LS4416A 
EXCEPTIONAL GAIN (400 MHz) 
VERY LOW NOISE FIGURE (400 MHz) 
VERY LOW DISTORTION 
HIGH AC/DC SWITCH OFF‐ISOLATION 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation  
MAXIMUM CURRENT
Gate Current (Note 1) 
MAXIMUM VOLTAGES 
Gate to Drain or Gate to Source 
 
 
TYP. 
MAX 
2500 
1000 
100 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
75 
‐‐ 
‐‐ 
7500 
4000 
MAX 
MIN 
‐0.1 
0.8 
15 
50 
10 
‐6 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
400 Mhz 
chipcomponents@micross.com
10000 
1000 
4000 
MAX 
100 
SOT-23 (Top View)
‐‐ 
‐‐ 
nV/√Hz  
UNITS 
mA 
nA 
µS 
µS 
pF 
pF 
pF 
UNITS 
dB 
µS 
 
 
                  V
Web:
V
V
www.micross.com/distribution.aspx
V
V
DS
DS
DS
DS
 = 15V,   I
 = 15V,   V
 = 15V,   V
 = 10V,   V
V
V
V
V
I
DS
DS
DS
GS 
DS
= ‐1µA,   V
 = 15V,   I
 = 15V,   I
 = 15V,   V
 = 15V,   V
CONDITIONS 
= ‐20V,  V
CONDITIONS 
= 5mA,    R
GS 
GS 
GS 
‐65°C to +200°C 
‐55°C to +135°C 
 
 
 
= 0V, f = 1MHz 
= 0V, f = 1kHz 
= 0V, f = 1kHz 
10dB (min) 
4dB (max) 
DS
300mW 
GS 
DS
GS 
= 5mA 
10mA 
= 1nA 
‐35V 
 = 0V 
 = 0V 
= 0V 
= 0V 
 
 
G
 = 1kΩ 

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