CM400C1Y-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM400C1Y-24S Datasheet
CM400C1Y-24S
Related parts for CM400C1Y-24S
CM400C1Y-24S Summary of contents
Page 1
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE Dual (AC switch) APPLICATION AC Power Switch for NPC OUTLINE DRAWING & INTERNAL CONNECTION Publication Date : September 2011 Collector current I .............….......................… C Collector-emitter voltage V Maximum junction temperature T ●Flat base Type ●Copper base plate ● ...
Page 2
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (T Symbol Item V Collector-emitter voltage CES V Gate-emitter voltage GES I C Collector current I CRM P Total power dissipation (Note. Emitter current (Note.1) I ERM V Isolation voltage Maximum junction temperature ...
Page 3
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol Item (Note.2) Thermal resistance Contact thermal resistance MECHANICAL CHARACTERISTICS Symbol Item M t Mounting torque Weight e Flatness of base plate c Note1 ...
Page 4
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE CHIP LOCATION (Top view) TEST CIRCUIT C1 Es1 = C2E1 V Short- V circuited G2 E2 Es2 Tr1 V test circuit Publication Date : September 2011 Tr1/Tr2: IGBT, Di1/Di2: FWDi C1 Es1 Short- G1 Short- ...
Page 5
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS (CM450DY-24S (CM450DY-24S 0.1×I 0.1× IGBT Turn-on switching energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) ...
Page 6
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) T =25 °C j 800 13 700 15 600 500 400 300 200 100 COLLECTOR-EMITTER VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T =25 ° =160A ...
Page 7
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =600 V, V =± INDUCTIVE LOAD 1000 Tj=125 °C Tj=150 °C 100 10 10 100 COLLECTOR CURRENT I HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =600 V, V =± ...
Page 8
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T 100 10 1 0.1 0.1 1 COLLECTOR-EMITTER VOLTAGE V GATE CHARGE CHARACTERISTICS (TYPICAL 600 400 500 GATE CHARGE Q Publication Date : September 2011 =25 °C j 1000 ...
Page 9
... IGBT MODULES > CM400C1Y-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage ...