CM1400DU-24NF_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DU-24NF_09 Datasheet

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... OUTLINE DRAWING & CIRCUIT DIAGRAM A,B HOUSING Type ( Mfg. Co. Ltd VHR- VHR-5N Tc measured point (The side of Cu base plate 8-f6.5 MOUNTING HOLES E2 9-M6 NUTS CM1400DU-24NF HIGH POWER SWITCHING USE ● ................................................................ ● V CES ......................................................... ● Insulated Type ● 2-elements in a pack 150 Tc measured point 137.5 ±0.25 ...

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... Case to heat sink, Thermal compound applied (1/2 module) Case temperature measured point is just under the chips (IGBT part) Case temperature measured point is just under the chips (FWDi part) ) does not exceed MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE Ratings 1200 ±20 1400 2800 ...

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... T = 25° 125° (V) COLLECTOR-EMITTER VOLTAGE MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE TRANSFER CHARACTERISTICS (TYPICAL 10V 25° 125° GATE-EMITTER VOLTAGE V (V) GE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS ...

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... GATE CHARGE 0.5 4 CM1400DU-24NF (TYPICAL Conditions 600V CC = ±15V 0.22Ω 125°C j Inductive load (A) E (TYPICAL 400V 600V ...