CM1400DUC-24S MITSUBISHI [Mitsubishi Electric Semiconductor], CM1400DUC-24S Datasheet
CM1400DUC-24S
Available stocks
Related parts for CM1400DUC-24S
CM1400DUC-24S Summary of contents
Page 1
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Dual switch (Half-Bridge) APPLICATION Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION July-2012 Collector current I Collector-emitter voltage V Maximum junction temperature T ●Flat base Type ● ...
Page 2
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (T Symbol Item V Collector-emitter voltage CES V Gate-emitter voltage GES I C Collector current I CRM P Total power dissipation (Note1 Emitter current (Note1) I ERM V Isolation voltage Maximum junction temperature ...
Page 3
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE THERMAL RESISTANCE CHARACTERISTICS Symbol Item (Note4) Thermal resistance Contact thermal resistance MECHANICAL CHARACTERISTICS Symbol Item M t Mounting torque Creepage distance s d Clearance ...
Page 4
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item V (DC) Supply voltage Gate (-emitter drive) voltage GEon R External gate resistance G CHIP LOCATION (Top view) TEST CIRCUIT C1 Cs1 V =15V Es1 C2E1 Cs2 Short- ...
Page 5
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS C1 Cs1 Es1 C2E1 Cs2 Es2 - Switching characteristics test circuit and waveforms 0.1×I 0.1× ...
Page 6
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) T =25 °C j 2800 V = 13.5 V 2400 15 V 2000 1600 1200 800 400 COLLECTOR-EMITTER VOLTAGE V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T =25 ° ...
Page 7
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =600 V, V =± Ω, INDUCTIVE LOAD ---------------: T =150 ° 1000 100 10 100 1000 COLLECTOR CURRENT I HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) V =600 V, V =± ...
Page 8
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T 1000 100 10 1 0.1 0.1 1 COLLECTOR-EMITTER VOLTAGE V GATE CHARGE CHARACTERISTICS (TYPICAL 600 1400 1000 2000 GATE CHARGE Q July-2012 =25 °C j 1000 ...
Page 9
... IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage ...