IRG4BC20MDS_07 IRF [International Rectifier], IRG4BC20MDS_07 Datasheet
IRG4BC20MDS_07
Related parts for IRG4BC20MDS_07
IRG4BC20MDS_07 Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at V • Low V for 4 to 10kHz applications CE(on) • IGBT Co-packaged with ultra-soft-recovery antiparallel diode 2 • Industry standard D Pak ...
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Parameter V Collector-to-Emitter Breakdown Voltageƒ 600 (BR)CES ∆V Temperature Coeff. of Breakdown Voltage ---- /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆ ∆ Temperature Coeff. of Threshold Voltage ---- GE(th) J ...
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Ideal diodes 0.0 0.1 100 150° 25° 15V 20µs PULSE WIDTH 0.1 0.1 1 Collector-to-Emitter Voltage (V) www.irf.com 1 ...
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T , Case Temperature ( 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V ...
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1MHz ies res oes ce gc 600 C ies 400 200 C oes C res 0 ...
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50Ω 150° 15V 8 480V 6.0 4.0 2.0 0 Collector Current (A) 100 10 1 0.1 0.4 6 100 ...
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V = 200V 125° 25° 4. 100 di /dt - (A/µs) f 500 V = 200V 125° 25°C ...
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Same type device as D.U.T. 430µF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce tr td(on d(on +Vge 10% ...
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Figure 18e. Macro Waveforms for L 1000V 50V 6000µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's D.U. ...
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Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT CODE 8024 AS S EMBL 02, 2000 EMB LY L INE "L" Note: "P" in ...
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Notes: Repetitive rating: V =20V; pulse width limited by maximum junction tem- GE perature (figure 20) ‚V =80%( =20V, L=10µ CES GE ƒPulse width ≤ 80µs; duty factor ≤ 0.1%. „Pulse width 5.0µs, single shot. 2 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...