IRG4BC30W_04 IRF [International Rectifier], IRG4BC30W_04 Datasheet

IRG4BC30W_04

Manufacturer Part Number

IRG4BC30W_04

Description

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

Manufacturer

IRF [International Rectifier]

Datasheet

1.IRG4BC30W_04.pdf (8 pages)

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INSULATED GATE BIPOLAR TRANSISTOR

• Lead-Free

Benefits

Absolute Maximum Ratings

Thermal Resistance

Features

• Lower switching losses allow more cost-effective

• Of particular benefit to single-ended converters and

• Low conduction losses and minimal minority-carrier

• Designed expressly for Switch-Mode Power

• Industry-benchmark switching losses improve

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

www.irf.com

operation than power MOSFETs up to 150 kHz

Supply and PFC (power factor correction)

applications

efficiency of all power supply topologies

tighter parameters distribution, exceptional reliability

("hard switched" mode)

resonant mode switching as well (up to >>300 kHz)

boost PFC topologies 150W and higher

recombination make these an excellent option for

STG

θJC

CES

ARV

θCS

θJA

@ T

= 25°C

= 100°C

= 25°C

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current Q

Clamped Inductive Load Current R

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy S

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

Parameter

n-channel

IRG4BC30WPbF

300 (0.063 in. (1.6mm from case )

Typ.

0.50

1.44

–––

10 lbf•in (1.1N•m)

-55 to + 150

TO-220AB

Max.

± 20

600

180

100

CE(on) max.

Max.

–––

1.2

CES

= 15V, I

PD - 95173

= 600V

= 2.70V

= 12A

Units

°C/W

04/23/04

°C

Related parts for IRG4BC30W_04

IRG4BC30W_04 Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses ...

Page 2

IRG4BC30WPbF Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage T (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...

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IRG4BC30W_04 IRF [International Rectifier], IRG4BC30W_04 Datasheet

IRG4BC30W_04

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IRG4BC30W_04 Summary of contents

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