IRG4BC40FD IRF [International Rectifier], IRG4BC40FD Datasheet - Page 24

• Manufacturer Part Number: IRG4BC40FD
• Description: Fit Rate / Equivalent Device Hours
• Manufacturer: IRF [International Rectifier]

IGBT / CoPack
Quarterly Reliability Report
Conditions
Bias:
Temperature:
Duration:
Test points:
Purpose
Failure Modes
Sensitive Parameters
HIGH TEMPERATURE REVERSE BIAS (HTRB)
Vce = As required
Tmax
2000 Hours nominal
168, 500, 1000,
1500, 2000, Hours nominal
High temperature reverse bias (HTRB) burn-in is to stress the devices with the
applied voltage in the blocking mode while elevating the junction temperature. This
will accelerate any blocking voltage degradation process.
The primary failure mode for HTRB stress is a gradual degradation of the breakdown
characteristics or V
foreign materials and polar/ionic contaminants. These materials, migrating under
application of electric field at high temperature, can perturb the electric field
termination structure.
Extreme care must be exercised in the course of a long term test to avoid potential
hazards such as electrostatic discharge or electrical overstress to the gate during
test. Failures arising from this abuse can be virtually indistinguishable from true
HTRB failures which results from the actual stress test.
V
(BR)CES,
(BR)CES
I
CES,
I
. This degradation has been attributed to the presence of
GES,
V
GE(th)
DUT
Test circuit
D = Diode for CoPack devices only
D
BIAS
DC
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