STE180NE10_07

Manufacturer Part NumberSTE180NE10_07
Description
ManufacturerSTMICROELECTRONICS [STMicroelectronics]
STE180NE10_07 datasheet
 
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General features
Type
V
DSS
STE180NE10
100V
100% avalanche tested
Low intrinsic capacitance
Gate charge minimized
Reduced voltage spread
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
Order codes
Part number
STE180NE10
February 2007
N-channel 100V - 4.5mΩ - 180A - ISOTOP
STripFET™ Power MOSFET
R
I
DS(on)
D
<6mΩ
180A
Internal schematic diagram
Marking
E180NE10
Rev 6
STE180NE10
ISOTOP
Package
Packaging
ISOTOP
Tube
1/12
www.st.com
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STE180NE10_07 Summary of contents

  • Page 1

    General features Type V DSS STE180NE10 100V ■ 100% avalanche tested ■ Low intrinsic capacitance ■ Gate charge minimized ■ Reduced voltage spread Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The ...

  • Page 2

    Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

  • Page 3

    STE180NE10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous 100°C ...

  • Page 4

    Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

  • Page 5

    STE180NE10 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

  • Page 6

    Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STE180NE10 ...

  • Page 7

    STE180NE10 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...

  • Page 8

    Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. ...

  • Page 9

    STE180NE10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

  • Page 10

    Package mechanical data DIM 10/12 ISOTOP MECHANICAL DATA mm MIN. TYP. MAX. 11.8 12.2 8.9 9.1 1.95 2.05 0.75 0.85 12.6 12.8 25.15 25.5 31.5 ...

  • Page 11

    STE180NE10 5 Revision history Table 7. Revision history Date 09-Sep-2004 03-Aug-2006 20-Feb-2007 Revision 4 Complete document 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 11/12 ...

  • Page 12

    Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any ...