STE180NE10_07 STMICROELECTRONICS [STMicroelectronics], STE180NE10_07 Datasheet - Page 5

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STE180NE10_07

Manufacturer Part Number
STE180NE10_07
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
STE180NE10
Table 6.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see
SD
SD
DD
= 180A, V
= 100A,
= 50V, T
Figure
Test conditions
14)
j
GS
= 150°C
= 0
Min.
Electrical characteristics
Typ.
1.65
235
14
Max.
180
540
1.5
Unit
µC
ns
A
A
V
A
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