1N5182 MICROSEMI [Microsemi Corporation], 1N5182 Datasheet

1N5182

Manufacturer Part Number

1N5182

Description

VOIDLESS-HERMETICALLY-SEALED HIGH VOLTAGE RECTIFIERS

Manufacturer

MICROSEMI [Microsemi Corporation]

Datasheet

1.1N5182.pdf (3 pages)

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5-13-2005 REV B

IMPORTANT: For the most current data, consult MICROSEMI’s website:

These “standard recovery” high voltage rectifier diode series are military qualified to

MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as the 1N5181 thru

1N5184 meet or exceed requirements of MIL-PRF-19500/389. They are ideal for

high-reliability where a failure cannot be tolerated for high voltage applications.

These 0.10 and 0.25 Amp rated rectifiers at 55ºC for working peak reverse voltages

from 1000 to 10,000 volts are hermetically sealed with voidless-glass construction

using an internal “Category I” metallurgical bond.

configurations are also available by adding “SM” suffix.

numerous other rectifier products to meet higher and lower current ratings with

various recovery time speed requirements including fast and ultrafast device types

in both through-hole and surface mount packages.

•

JEDEC registered 1N3643 thru 1N3647, 1N4254

Voidless Hermetically Sealed Glass Package

Triple Layer Passivation

Internal “Category I” Metallurgical bonds

Lowest Reverse Leakage Available

Lowest Thermal Resistance Available

Absolute High Voltage / High Temperature Stability

1N5181 thru 1N5184 meet or exceed requirements

1N3644 thru 1N3647 JAN, JANTX types available

Surface mount equivalents also available in a square

Junction & Storage Temperature: -65

Thermal Resistance: 38

Average Rectified Forward Current (I

Solder Temperatures: 260ºC for 10 s (maximum)

1N3643 thru 1N3647: 0.250 Amps @ T

1N4254 thru 1N4257: 0.250 Amps @ T

1N5181 thru 1N5184: 0.100 Amps @ T

thru 1N4257, and 1N5181 thru 1N5187 series

of MIL-S-19500/389

per MIL-S19500/279

end-cap MELF configuration with “SM” suffix

inch (10 mm) lead length from body

Forward Surge Current: See Electrical

Characteristics for surge at 8.3 ms half-sine wave

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

MAXIMUM RATINGS

S C O T T S D A L E D I V I S I O N

FEATURES

0.150 Amps @ T

0.060 Amps @ T

C/W junction to lead at 3/8

DESCRIPTION

C to +175

= 55ºC

= 100ºC

Scottsdale Division

Microsemi

Surface mount MELF package

Microsemi also offers

http://www.microsemi.com

VOIDLESS-HERMETICALLY-SEALED

•

HIGH VOLTAGE RECTIFIERS

Inherently radiation hard as described in Microsemi

See package dimensions on last page

High voltage standard recovery rectifiers 1000 to

10,000 V

Military and other high-reliability applications

Applications include bridges, half-bridges, catch

diodes, voltage multipliers,

power supplies, transmitters, and radar

equipment

High forward surge current capability

Extremely robust construction

Low thermal resistance

MicroNote 050

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

TERMINATIONS: Axial leads are copper with

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

TAPE & REEL option: Standard per EIA-296

WEIGHT: 400 mg (approx)

Tin/Lead (Sn/Pb) finish

MECHANICAL AND PACKAGING

1N3643 thru 1N3647

1N5181 thru 1N5184

1N4254 thru 1n4257

APPLICATIONS / BENEFITS

X-ray machines,

APPEARANCE

S Package

Page 1

Related parts for 1N5182

1N5182 Summary of contents

Page 1

DESCRIPTION These “standard recovery” high voltage rectifier diode series are military qualified to MIL-PRF-19500/279 for the 1N3644 thru 1N3647. Others such as ...

Page 2

... NOTE 250mA NOTE 100mA Symbol V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. ...

Page 3

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