1N5186_08 MICROSEMI [Microsemi Corporation], 1N5186_08 Datasheet

1N5186_08

Manufacturer Part Number

1N5186_08

Description

VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS

Manufacturer

MICROSEMI [Microsemi Corporation]

Datasheet

1.1N5186_08.pdf (2 pages)

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6-11-2008 REV C

IMPORTANT: For the most current data, consult MICROSEMI’s website:

ELECTRICAL CHARACTERISTICS

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 3.0 Amp rated rectifiers for working peak reverse

voltages from 100 to 600 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix. Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speed requirements including fast

and ultrafast device types in both through-hole and surface mount packages.

•

1N5186

1N5187

1N5188

1N5189

1N5190

TYPE

Junction & Storage Temperature: -65

Thermal Resistance: 20

Thermal Impedance: 1.5

Average Rectified Forward Current (I

Forward Surge Current: 80 Amps @ 8.3 ms half-sine

Solder Temperatures: 260ºC for 10 s (maximum)

Popular JEDEC registered 1N5186 to 1N5190 series

Voidless hermetically sealed glass package

Triple-Layer Passivation

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 100 to 600 Volts.

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/424

Surface mount equivalents also available in a square

end-cap MELF configuration with “US” suffix

inch (10 mm) lead length from body

= 25ºC and 0.700 Amps at T

WORKING PEAK

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

VOLTAGE

REVERSE

VOLTS

MAXIMUM RATINGS

100V

200V

400V

500V

600V

RWM

S C O T T S D A L E D I V I S I O N

FEATURES

C/W junction to lead at 3/8

BREAKDOWN

C/W @ 10 ms heating time

VOLTAGE

MINIMUM

DESCRIPTION

VOLTS

120V

240V

480V

550V

660V

@ 50μA

= 150ºC

): 3.0 Amps @ T

C to +175

VOLTS

0.9V

MIN

@ 9A (pulsed)

Scottsdale Division

Microsemi

FORWARD

VOLTAGE

VOLTS

MAX

1.5V

VOIDLESS-HERMETICALLY SEALED

FAST RECOVERY GLASS RECTIFIERS

http://www.microsemi.com

•

µA

2.0

CASE: Hermetically sealed voidless hard glass

TERMINATIONS: Axial-leads are Tin/Lead

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

WEIGHT:

See package dimensions on last page

Fast recovery 3 Amp rectifiers 100 to 600 V

Military and other high-reliability applications

General rectifier applications including bridges,

half-bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Low thermal resistance

Controlled avalanche with peak reverse power

capability

Inherently radiation hard as described in Microsemi

MicroNote 050

with Tungsten slugs

(Sn/Pb) over Copper

TAPE & REEL option: Standard per EIA-296

MAXIMUM

CURRENT

REVERSE

MECHANICAL AND PACKAGING

1N5186 thru 1N5190

@ V

APPLICATIONS / BENEFITS

RWM

100

µA

750 mg

RECOVERY

MAXIMUM

REVERSE

TIME

150

200

250

300

400

APPEARANCE

Package E

AMPS

CURRENT AMPS

3.0

RECTIFIED

AVERAGE

Page 1

AMPS

150

0.7

Related parts for 1N5186_08

1N5186_08 Summary of contents

Page 1

DESCRIPTION This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/424 and is ideal for high-reliability applications where a failure cannot ...

Page 2

Symbol Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current Working Peak Reverse Voltage: The ...

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