MMBD7000LT1G_09 ONSEMI [ON Semiconductor], MMBD7000LT1G_09 Datasheet - Page 2

• Manufacturer Part Number: MMBD7000LT1G_09
• Description: Dual Switching Diode These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
• Manufacturer: ONSEMI [ON Semiconductor]

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Forward Voltage
Reverse Recovery Time
Capacitance (V
50 W OUTPUT
(I
(V
(V
(V
(I
(I
(I
(I
GENERATOR
(BR)
F
F
F
F
R
R
R
PULSE
= 1.0 mAdc)
= 10 mAdc)
= 100 mAdc)
= I
= 50 Vdc)
= 100 Vdc)
= 50 Vdc, 125°C)
820 W
= 100 mAdc)
R
= 10 mAdc) (Figure 1)
0.1 mF
R
= 0 V)
2.0 k
100 mH
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
Characteristic
DUT
2. Input pulse is adjusted so I
3. t
Figure 1. Recovery Time Equivalent Test Circuit
p
(T
» t
A
rr
= 25°C unless otherwise noted) (EACH DIODE)
0.1 mF
OSCILLOSCOPE
50 W INPUT
SAMPLING
http://onsemi.com
R(peak)
V
2
R
t
is equal to 10 mA.
r
INPUT SIGNAL
10%
90%
t
p
t
Symbol
V
I
I
V
(BR)
I
t
R2
R3
C
R
rr
F
F
) of 10 mA.
I
I
R
F
0.55
0.67
0.75
Min
100
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
Max
0.82
100
1.0
3.0
0.7
1.1
4.0
1.5
i
R(REC)
−
= 1.0 mA)
= 1.0 mA
mAdc
t
Unit
Vdc
Vdc
pF
ns