MMBD914LT1G_09 ONSEMI [ON Semiconductor], MMBD914LT1G_09 Datasheet - Page 2

• Manufacturer Part Number: MMBD914LT1G_09
• Description: High-Speed Switching Diode
• Manufacturer: ONSEMI [ON Semiconductor]

+10 V
100
1.0
0.1
50 W OUTPUT
10
GENERATOR
0.2
PULSE
820 W
0.1 mF
0.4
Figure 2. Forward Voltage
2.0 k
100 mH
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
0.6
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
0.68
0.64
0.60
0.56
0.52
DUT
2. Input pulse is adjusted so I
3. t
0
Figure 1. Recovery Time Equivalent Test Circuit
0.8
p
» t
T
A
rr
= 25°C
0.1 mF
OSCILLOSCOPE
T
50 W INPUT
A
SAMPLING
1.0
2.0
= -40°C
V
R
Figure 4. Capacitance
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1.2
4.0
R(peak)
V
2
R
0.001
0.01
t
is equal to 10 mA.
r
1.0
0.1
10
INPUT SIGNAL
10%
90%
0
6.0
t
p
10
t
Figure 3. Leakage Current
V
R
, REVERSE VOLTAGE (VOLTS)
8.0
T
T
F
T
T
T
A
A
20
) of 10 mA.
A
A
A
I
= 150°C
= 125°C
I
= 85°C
= 55°C
= 25°C
R
F
(I
F
30
= I
at i
R
OUTPUT PULSE
= 10 mA; MEASURED
R(REC)
t
rr
i
R(REC)
= 1.0 mA)
40
= 1.0 mA
t
50