BAS116LP3 DIODES [Diodes Incorporated], BAS116LP3 Datasheet - Page 2

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BAS116LP3

Manufacturer Part Number
BAS116LP3
Description
ULTRA-SMALL SURFACE MOUNT LOW LEAKAGE DIODE
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes:
BAS116LP3
Document number: DS35241 Rev. 5 - 2
300
250
200
150
100
4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
50
0
0
Fig. 1 Power Derating Curve, Total Package
25
T , AMBIENT TEMPERATURE (°C)
A
Characteristic
Characteristic
Characteristic
@T
50
A
= 25°C unless otherwise specified
75
@T
A
100
= 25°C unless otherwise specified
@ t = 1.0μs
@ t = 1.0s
@ t = 1.0ms
125
150
www.diodes.com
Symbol
V
(BR)R
V
C
I
t
R
rr
2 of 4
F
T
Symbol
V
V
V
R(RMS)
Symbol
T
I
I
I
FRM
FSM
RWM
V
RRM
J
FM
R
, T
R
Min
P
85
θ JA
D
STG
0.75
1.15
Typ
120
0.9
1.0
1.6
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Fig. 2 Typical Forward Characteristics
3000
Max
0.95
1.10
1.20
1.35
10.0
100
500
3.0
0.4
-65 to +150
Value
Value
215
500
4.0
1.0
0.5
85
60
250
500
Unit
nA
pF
ns
V
V
0.8
I
I
I
I
I
V
V
V
V
I
I
R
F
F
F
F
F
rr
R
R
R
R
= 0.1 x I
= 1.0mA
= 10mA
= 50mA
= 150mA
= I
= 100μA
= 75V
= 1V, T
= 75V, T
= 0, f = 1.0MHz
BAS116LP3
Test Condition
R
1.2
= 10mA,
© Diodes Incorporated
°C/W
R
Unit
Unit
J
mA
mA
mW
, R
°C
J
V
V
A
= 150°C
January 2012
= 150°C
L
= 100Ω
1.6

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