MMBF5484LT1_06 ONSEMI [ON Semiconductor], MMBF5484LT1_06 Datasheet

MMBF5484LT1_06

Manufacturer Part Number

MMBF5484LT1_06

Description

JFET Transistor N−Channel

Manufacturer

ONSEMI [ON Semiconductor]

Datasheet

1.MMBF5484LT1_06.pdf (6 pages)

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MMBF5484LT1

JFET Transistor

N−Channel

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

February, 2006 − Rev. 3

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Drain−Gate Voltage

Reverse Gate−Source Voltage

Forward Gate Current

Continuous Device Dissipation at or Below

Storage Channel Temperature Range

Total Device Dissipation FR−5 Board,

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

Pb−Free Package is Available

Linear Derating Factor

(Note 1) T

Derate above 25°C

= 25°C

Characteristic

= 25°C

Rating

Preferred Device

Symbol

GS(r)

G(f)

, T

qJA

stg

−65 to +150

−55 to +150

Value

Max

200

225

556

2.8

1.8

mW/°C

mAdc

°C/W

Unit

Vdc

°C

†For information on tape and reel specifications,

MMBF5484LT1

MMBF5484LT1G

Preferred devices are recommended choices for future use

and best overall value.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

Device

vary depending upon manufacturing location.

(Note: Microdot may be in either location)

ORDERING INFORMATION

GATE

M6B = Device Code

MARKING DIAGRAM

http://onsemi.com

= Date Code*

= Pb−Free Package

(Pb−Free)

Package

SOT−23

M6B M G

Publication Order Number:

SOT−23 (TO−236)

1 DRAIN

2 SOURCE

CASE 318

STYLE 10

3,000 / Tape & Reel

MMBF5484LT1/D

Shipping

†

Related parts for MMBF5484LT1_06

MMBF5484LT1_06 Summary of contents

Page 1

MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below T = 25°C C Linear Derating Factor Storage Channel Temperature Range ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic OFF CHARACTERISTICS = −1.0 mAdc, V Gate−Source Breakdown Voltage (I G Gate Reverse Current (V = − 20 Vdc − 20 Vdc Gate Source Cutoff Voltage ( Vdc, ...

Page 3

COMMON SOURCE CHARACTERISTICS (V 30° 20° 10° 0° 350° 100 40° 1.0 100 0.9 50° 0 60° 0.7 70° 80° 0.6 800 90° 900 100° 110° 120° 130° 140° 150° 160° 170° 180° 190° Figure 5. ...

Page 4

COMMON GATE CHARACTERISTICS 7.0 ig DSS 5 DSS 2.0 1.0 0 0.5 ig DSS DSS 0.3 0 ...

Page 5

DSS 0.4 70° 80° 0.3 90° 100° 110° 120° 130° 140° 150° 160° 170° 180° 190° Figure 13. S ...

Page 6

D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...

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