MMBFJ175LT1G_09 ONSEMI [ON Semiconductor], MMBFJ175LT1G_09 Datasheet
MMBFJ175LT1G_09
Manufacturer Part Number
MMBFJ175LT1G_09
Description
JFET Chopper P - Channel - Depletion
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.MMBFJ175LT1G_09.pdf
(2 pages)
MMBFJ175LT1G
JFET Chopper
P−Channel − Depletion
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 5
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Drain−Gate Voltage
Reverse Gate−Source Voltage
Total Device Dissipation FR−5 Board,
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Gate −Source Breakdown Voltage
Gate Reverse Current
Gate −Source Cutoff Voltage
Zero Gate−Voltage Drain Current (Note 2)
Drain Cutoff Current
Drain Source On Resistance
Input Capacitance
Reverse Transfer
Capacitance
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(V
(V
(V
(V
(V
(I
(Note 1) T
Derate above 25°C
D
DS
DS
DS
GS
DS
= 500 mA)
= 0, I
= 0 V, V
= 15, I
= 15 V, V
= 0, V
Characteristic
Characteristic
D
A
DS
D
= 1.0 mA)
= 25°C
GS
Rating
= 10 nA)
GS
= 15 V)
= 20 V)
V
= 10 V)
DS
f = 1.0 MHz
= 0, V
GS
= 10V
(T
A
V
V
Symbol
= 25°C unless otherwise noted)
Symbol
Symbol
r
T
(BR)GSS
GS(OFF)
I
V
DS(on)
I
I
C
R
D(off)
C
J
V
GSS
DSS
GS(r)
P
, T
rss
qJA
iss
DG
D
stg
−55 to +150
Min
3.0
7.0
30
−
−
−
−
−
Value
Max
−25
225
556
1.8
25
Max
125
1.0
6.0
1.0
5.5
60
11
−
1
mW/°C
°C/W
Unit
Unit
Unit
mW
mA
nA
nA
pF
°C
W
V
V
V
V
†For information on tape and reel specifications,
MMBFJ175LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
1
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
2
ORDERING INFORMATION
GATE
6W
M
G
MARKING DIAGRAM
3
http://onsemi.com
3
1
= Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
Package
SOT−23
6W M G
Publication Order Number:
G
SOT−23 (TO−236)
1 DRAIN
2 SOURCE
CASE 318
STYLE 10
3000 / Tape & Reel
MMBFJ175LT1/D
Shipping
†
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MMBFJ175LT1G_09 Summary of contents
Page 1
MMBFJ175LT1G JFET Chopper P−Channel − Depletion Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 25°C ...
Page 2
D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...