BAS116_07

Manufacturer Part NumberBAS116_07
DescriptionSilicon Low Leakage Diode
ManufacturerINFINEON [Infineon Technologies AG]
BAS116_07 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (73Kb)Embed
Next
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BAS116
Type
BAS116
Maximum Ratings at T
= 25°C, unless otherwise specified
A
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
Total power dissipation
T
54°C
S
Junction temperature
Storage temperature
Thermal Resistance
Parameter
2)
Junction - soldering point
BAS116
1
Pb-containing package may be available upon special request
2
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
Package
Configuration
SOT23
single
Symbol
V
R
V
RM
I
F
I
FSM
P
tot
T
j
T
stg
Symbol
R
thJS
1
BAS116...
Marking
JVs
Value
Unit
80
V
85
250
mA
A
4.5
0.5
370
mW
150
°C
-65 ... 150
Value
Unit
K/W
260
2007-04-19

BAS116_07 Summary of contents

  • Page 1

    Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS116 Type BAS116 Maximum Ratings 25°C, unless otherwise specified A Parameter Diode reverse voltage Peak reverse voltage Forward current ...

  • Page 2

    Electrical Characteristics at T Parameter DC Characteristics Breakdown voltage I = 100 µA (BR) Reverse current 150 ° Forward voltage ...

  • Page 3

    Reverse current Parameter R BAS 116 Forward current 25°C A ...

  • Page 4

    Permissible Puls Load R thJS 0,5 0,2 0,1 0,05 0, 0,01 0,005 Permissible Pulse Load ...

  • Page 5

    Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

  • Page 6

    Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...