BAS116_07 INFINEON [Infineon Technologies AG], BAS116_07 Datasheet - Page 2

• Manufacturer Part Number: BAS116_07
• Description: Silicon Low Leakage Diode
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics at T
Parameter
DC Characteristics
AC Characteristics
Test circuit for reverse recovery time
Breakdown voltage
I
Reverse current
V
V
Forward voltage
I
I
I
I
Diode capacitance
V
Reverse recovery time
I
R
(BR)
F
F
F
F
F
R
R
R
L
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 10 mA, I
= 75 V
= 75 V, T
= 100
= 0 V, f = 1 MHz
= 100 µA
A
R
= 150 °C
= 10 mA, measured at I
F
D.U.T.
Oscillograph
A
= 25°C, unless otherwise specified
EHN00022
R
= 1mA ,
Oscillograph: R = 50
Puls generator: t
2
Symbol
V
I
V
C
t
R
rr
(BR)
F
T
t
p
r
= 10µs, D = 0.05,
= 0.6ns, R
min.
85
-
-
-
-
-
-
-
-
, t
r
Values
= 0.35ns, C
typ.
0.6
i
-
-
-
-
-
-
-
2
= 50
max.
1000
1100
1250
900
80
1.5
BAS116...
5
-
2007-04-19
-
1pF
Unit
V
nA
mV
pF
µs