MMBT3904-HF_12 COMCHIP [Comchip Technology], MMBT3904-HF_12 Datasheet

no-image

MMBT3904-HF_12

Manufacturer Part Number
MMBT3904-HF_12
Description
General Purpose Transistor
Manufacturer
COMCHIP [Comchip Technology]
Datasheet
Maximum Ratings
Electrical Characteristics
MMBT3904-HF
RoHS Device
QW-JTR02
Halogen Free
Features
General Purpose Transistor
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-Continuous
Collector dissipation
Thermal resistance, junction to ambient
Storage temperature and junction temperature
Transition frequency
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
-Epitaxial planar die construction
-As complementary type, the PNP
transistor MMBT3904-HF is recommended
Parameter
Base
1
Parameter
Collector
Emitter
3
2
(at TA=25°C unless otherwise noted)
(at TA=25°C unless otherwise noted)
(NPN)
Comchip Technology CO., LTD.
I
I
I
V
V
V
V
V
I
I
V
f=100MH
V
I
V
I
C
C
E
C
C
C
B1
CB
CE
EB
CE
CE
CE
CC
CC
=50mA , I
=50mA , I
=10mA , I
=100μA , I
=100μA , I
=1mA , I
=I
=5V , I
=60V , I
=30V , V
=1V , I
=1V , I
=20V , I
=3.0V , V
=3.0V , I
B2
Conditions
=1.0mA
Z
C
C
C
B
B1
B
B
=0
E
=10mA
=50mA
C
C
=0
BE(off)
=5mA
=5mA
E
C
BE
=0
=10mA
=1.0mA
=10mA
=0
=0
=-0.5V
Symbol
T
=3V
STG
V
V
V
R
P
CBO
CEO
EBO
I
θJA
C
C
, T
J
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
Min
Dimensions in inches and (millimeter)
-55
Symbol
0.020(0.50)
0.012(0.30)
V
V
V
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE
h
h
BE
I
I
I
CBO
CEX
EBO
FE(1)
FE(2)
td
ts
(sat)
f
tr
tf
(sat)
T
SOT-23
1
0.079(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
Typ
3
0.004(0.10) max
Min
100
300
60
40
60
6
2
0.005(0.20) min
0.100(2.55)
0.089(2.25)
Max
+150
625
0.2
0.2
60
40
0.006(0.15)
0.002(0.05)
6
Max
0.95
400
200
0.3
0.1
50
0.1
35
35
50
Unit
O
C/W
O
Unit
W
V
V
V
A
Mhz
C
Page 1
µA
nA
µA
nS
nS
nS
nS
REV:A
V
V
V
V
V

Related parts for MMBT3904-HF_12

MMBT3904-HF_12 Summary of contents

Page 1

... General Purpose Transistor MMBT3904-HF RoHS Device Halogen Free Features -Epitaxial planar die construction -As complementary type, the PNP transistor MMBT3904-HF is recommended Collector 3 1 Base 2 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Collector dissipation ...

Page 2

... General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3904-HF) Fig.1 Typical pulsed current gain V.S. Collector current 500 400 300 200 100 0 0.1 1 Ic- Collector current (mA) Fig.3 Base-Emitter saturatioin voltage V.S. Collector current 1 ß=10 o -40C 0.8 o 25C 0.6 o 125C 0 0 Collector current (mA) Fig.5 Collector-cutoff current V.S. Ambient temperature ...

Page 3

General Purpose Transistor Reel Taping Specification Trailer End ....... 10 pitches (min) A SYMBOL (mm) SOT-23 3.10 ± 0.10 (inch) ± 0.122 0.004 E SYMBOL (mm) SOT-23 1.75 0.10 ± (inch) ± 0.069 0.004 ...

Page 4

... General Purpose Transistor Marking Code Marking Code Park Number MMBT3904-HF Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 0.95 0.037 C 0.95 0.037 D 2.02 0.080 E 3.03 0.120 Standard Packaging Qty per Reel Reel Size Case Type (Pcs) (inch) SOT-23 3000 QW-JTR02 1AM 1AM Comchip Technology CO., LTD. ...

Related keywords