VS-8EWF04S-M3 VISHAY [Vishay Siliconix], VS-8EWF04S-M3 Datasheet

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VS-8EWF04S-M3

Manufacturer Part Number
VS-8EWF04S-M3
Description
Surface Mountable Fast Soft Recovery Diode, 8A
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Note
(1)
Document Number: 93375
Revision: 04-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
V
I
V
t
T
VOLTAGE RATINGS
PART NUMBER
VS-8EWF02S-M3
VS-8EWF04S-M3
VS-8EWF06S-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
Maximum I
F(AV)
FSM
rr
Connecting one pin only.
RRM
F
J
Diode variation
Package
2
2
D-PAK
V
Snap
t for fusing
t for fusing
I
F
I
F(AV)
FSM
V
t
at I
rr
R
Surface Mountable Fast Soft Recovery Diode, 8 A
F
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Anode -
Sinusoidal waveform
8 A, T
1 A, 100 A/μs
Range
200 V, 400 V, 600 V
D-PAK (TO-252AA)
SYMBOL
1
CHARACTERISTICS
I
J
V
FSM
I
F(AV)
= 25 °C
I
RRM
REVERSE VOLTAGE
Single die
I
2
2
common
cathode
t
t
120 A
55 ns
Base
1.2 V
(1)
This document is subject to change without notice.
8 A
0.5
, MAXIMUM PEAK
+
2
200
400
600
-
V
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
3
Anode
C
= 96 °C, 180° conduction half sine wave
TEST CONDITIONS
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
APPLICATIONS
• Output rectification and freewheeling diode in
• Input
DESCRIPTION
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
peak of 260 °C
definition
inverters, choppers and converters
conducted EMI should be met
V
RSM
RRM
RRM
PEAK REVERSE VOLTAGE
200 to 600
- 40 to 150
, MAXIMUM NON-REPETITIVE
VALUES
applied
applied
rectifications
DiodesEurope@vishay.com
120
1.2
55
8
300
500
700
V
Vishay Semiconductors
where
VALUES
101
120
510
51
72
8
severe
www.vishay.com/doc?91000
UNITS
°C
ns
A
A
restrictions
V
V
AT 150 °C
www.vishay.com
UNITS
I
RRM
mA
A
A
3
A
2
2
s
s
on
1

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VS-8EWF04S-M3 Summary of contents

Page 1

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Surface Mountable Fast Soft Recovery Diode D-PAK 1 Anode - PRODUCT SUMMARY Package D-PAK (TO-252AA) I F(AV) V 200 V, 400 V, 600 FSM t rr Diode variation Snap MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS I Sinusoidal waveform F(AV) V RRM I FSM ...

Page 2

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor THERMAL - MECHANICAL SPECIFICATIONS PARAMETER ...

Page 3

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 150 8EWF ..S Series 140 R (DC) = 2.5 °C/ W thJC 130 120 Conduction Angle 110 100 90 30° 80 60° 90° 120° Average Forward Current (A) Fig Current Rating Characteristics 150 8EWF..S S eries R (DC) = 2.5 °C/ W ...

Page 4

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Vishay Semiconductors 100 25° 150° ..S S eries 1 0.5 1 1.5 2 2.5 Instantaneous Forward Voltage (V) Fig Forward Voltage Drop Characteristics 0.4 8EWF..S S eries ° 120 160 R ate Of F all Of Forward Current - dI/ dt (A/ µs ) Fig ...

Page 5

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Fig Recovery Current Characteristics 0.08 0 Document Number: 93375 For technical questions within your region, please contact one of the following: Revision: 04-Apr-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 6

... VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3 Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-8EWF02S-M3 VS-8EWF02STR-M3 VS-8EWF02STRL-M3 VS-8EWF02STRR-M3 VS-8EWF04S-M3 VS-8EWF04STR-M3 VS-8EWF04STRL-M3 VS-8EWF04STRR-M3 VS-8EWF06S-M3 VS-8EWF06STR-M3 VS-8EWF06STRL-M3 VS-8EWF06STRR-M3 Dimensions Part marking information Packaging information www.vishay.com ...

Page 7

DIMENSIONS in millimeters and inches ( (3) b3 0.010 (3) 4 Ø ( ( 0.010 Lead ...

Page 8

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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