2mbi150ua-120 Fuji Electric holdings CO.,Ltd, 2mbi150ua-120 Datasheet

no-image

2mbi150ua-120

Manufacturer Part Number
2mbi150ua-120
Description
1200v / 150a 2 In One-package Igbt Module U-series
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2MBI150UA-120
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
2MBI150UA-120
Quantity:
50
2MBI150UA-120
IGBT Module U-Series
· High speed switching
· Voltage drive
· Low inductance module structure
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*
*
*
Thermal resistance
Contact Thermal resistance
Items
1 :
2 :
3
4
:Biggest internal terminal resistance among arm.
Thermal resistance characteristics
: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Electrical characteristics (at Tj=25°C unless otherwise specified)
Recommendable value : Mounting2.5 to 3.5 N·m(M5)
All terminals should be connected together when isolation test will be done.
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Maximum ratings and characteristics
3
Symbols
Symbols
I
I
V
V
(terminal)
V
(chip)
C
t
t
t
t
t
V
(terminal)
V
(chip)
t
R lead
Rth(j-c)
Rth(j-c)
Rth(c-f)*
CES
GES
on
off
f
r
r(i)
rr
GE(th)
CE(sat)
CE(sat)
ies
F
F
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Mounting *
Terminals *
Applications
4
Conditions
V
V
V
V
V
V
I
V
R
V
IGBT
FWD
With thermal compound
C
I
I
F
F
GE
CE
CE
GE
CE
CC
GE
GE
G
=150A
=150A
=150A
Conditions
=2.2
=20V, I
=10V, V
=0V, V
=0V, V
=15V, I
=±15V
=0V
=600V
2
2
Symbol
V
V
I
I
-I
-I
P
T
T
V
C
C
stg
C
C
C
j
CES
GES
iso
p
GE
CE
C
C
GE
pulse
=150mA
=150A
=1200V
=±20V
=0V, f=1MHz
1200V / 150A 2 in one-package
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Conditions
Continuous
AC:1min.
1 device
1ms
Characteristics
Characteristics
Min.
Min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
4.5
Typ.
Typ.
Equivalent Circuit Schematic
0.05
17
C1
6.5
1.95
2.20
1.75
2.00
0.36
0.21
0.03
0.37
0.07
1.80
1.90
1.60
1.70
1.39
Rating
-40 to +125
1200
+150
2500
±20
200
150
400
300
150
300
735
3.5
3.5
G1 E1
Max.
Max.
200
0.17
0.28
2.0
8.5
2.30
2.10
1.20
0.60
1.00
0.30
2.10
1.90
0.35
C2E1
Unit
Unit
Unit
V
V
A
W
°C
VAC
N·m
mA
nA
V
V
nF
µs
V
µs
m
°C/W
°C/W
°C/W
G2 E2
E2

Related parts for 2mbi150ua-120

2mbi150ua-120 Summary of contents

Page 1

... IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Collector Power Dissipation Junction temperature Storage temperature ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 400 VGE=20V 15V 300 200 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 400 T j=25°C 300 200 100 Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V Hz, Tj= 25° ...

Page 3

... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25°C 10000 1000 100 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=±15V, Tj= 25°C 10000 1000 toff tr 100 10 0.1 1.0 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=150A, VGE=± ...

Page 4

... Forward current vs. Forward on voltage (typ.) 400 Tj=25°C 300 200 100 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 Pulse width : Pw [ sec ] Outline Drawings, mm M232 chip 1000 Tj=125°C 100 FWD IGBT 0.100 1.000 IGBT Module Reverse recovery characteristics (typ ...

Related keywords