2mbi150u4h-120 Fuji Electric holdings CO.,Ltd, 2mbi150u4h-120 Datasheet

2mbi150u4h-120

Manufacturer Part Number

2mbi150u4h-120

Description

Igbt Module U Series 1200v / 150a / 2 In One Package

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI150U4H-120.pdf (5 pages)

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2MBI150U4H-120

IGBT MODULE (U series)

1200V / 150A / 2 in one package

Note *1: All terminals should be connected together when isolation test will be done.

Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)

Note *3: Biggest internal terminal resistance among arm.

Note *4: This is the value which is deﬁned mounting on the additional cooling ﬁn with thermal compound.

Items

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Isolation voltage Between terminal and copper base (*1) V

Screw torque

Items

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip (*3)

Items

Thermal resistance (1device)

Contact thermal resistance (1device)

Absolute Maximum Ratings (at Tc=25°C unless otherwise speciﬁed)

Electrical characteristics (at Tj= 25°C unless otherwise speciﬁed)

Thermal resistance characteristics

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Ampliﬁer

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Symbols

(teminal)

(chip)

Cies

ton

tr (i)

toff

(teminal)

(chip)

trr

R lead

Symbols

Rth(j-c)

Rth(c-f)

CES

GES

GE (th)

CE (sat)

Symbols

Ic pulse

-Ic

-Ic pulse

Tstg

Mounting (*2)

Terminals (*2)

CES

GES

iso

Conditions

IGBT

FWD

with Thermal Compound (*4)

= 150A

= 4.7Ω

= 0V, V

= 20V, I

= 15V

= 0V, V

= 600V

= ±15V

= 0V

= 150mA

Conditions

Continuous

1ms

1 device

AC : 1min.

= 10V, f = 1MHz

= 1200V

= ±20V

Tc=25°C

Tc=80°C

Tc=25°C

Tc=80°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Maximum ratings

min.

4.5

-40 to +125

Characteristics

1200

+150

2500

±20

200

150

400

300

150

300

780

3.5

4.5

0.025

2.00

2.20

1.90

2.10

0.32

0.10

0.03

0.41

0.07

1.75

1.85

1.65

1.75

0.53

typ.

6.5

IGBT Modules

max.

2.15

2.05

1.20

0.60

1.00

0.30

1.90

1.80

0.35

0.24

0.16

400

2.0

8.5

Units

VAC

N·m

°C

Units

°C/W

mΩ

µs

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